Doping effects of vanadium pentoxide in hole injection layer for quantum dot light emitting diodes

  • Suk Ho Song
  • , Dae Ho Song
  • , Jun Seo Lee
  • , Sang Soo Kim
  • , Jang Kun Song

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We report the doping effect of V2O5 into hole injection layer (HIL) for quantum dot light emitting diodes (QD-LEDs). We used PEDOT:PSS for HIL, and by doping 0.1 wt% of V2O5 into PEDOT:PSS layer, the maximum external quantum efficiency was increased from 1 % to 1.28 % and the turn-on voltage was reduced from 14.65 V to 12.72 V, when compared to pure PEDOT:PSS. This indicates that V2O5 enhances the hole injection property for PEDOT:PSS layer.

Original languageEnglish
Title of host publication2nd International Conference on Composite Materials and Material Engineering, ICCMME 2017
PublisherAmerican Institute of Physics Inc.
ISBN (Electronic)9780735415188
DOIs
StatePublished - 17 May 2017
Event2nd International Conference on Composite Materials and Material Engineering, ICCMME 2017 - Chengdu, China
Duration: 17 Feb 201719 Feb 2017

Publication series

NameAIP Conference Proceedings
Volume1846
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference2nd International Conference on Composite Materials and Material Engineering, ICCMME 2017
Country/TerritoryChina
CityChengdu
Period17/02/1719/02/17

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