Direct measurement of the spin gaps in a gated GaAs two-dimensional electron gas

Tsai Yu Huang; Chi Te Liang; Yang Fang Chen; Michelle Y. Simmons; Gil Ho Kim; David A. Ritchie

doi:10.1186/1556-276X-8-138

Direct measurement of the spin gaps in a gated GaAs two-dimensional electron gas

Tsai Yu Huang, Chi Te Liang, Yang Fang Chen, Michelle Y. Simmons, Gil Ho Kim, David A. Ritchie

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have performed magnetotransport measurements on gated GaAs two-dimensional electron gases in which electrons are confined in a layer of the nanoscale. From the slopes of a pair of spin-split Landau levels (LLs) in the energy-magnetic field plane, we can perform direct measurements of the spin gap for different LLs. The measured g-factor g is greatly enhanced over its bulk value in GaAs (0.44) due to electron-electron (e-e) interactions. Our results suggest that both the spin gap and g determined from conventional activation energy studies can be very different from those obtained by direct measurements.

Original language	English
Article number	138
Pages (from-to)	1-6
Number of pages	6
Journal	Nanoscale Research Letters
Volume	8
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-8-138
State	Published - 2013

Keywords

Disorder
G-factor
Spin

Access to Document

10.1186/1556-276X-8-138

Cite this

@article{01079a7b82ea4065bffed54ea3da8031,

title = "Direct measurement of the spin gaps in a gated GaAs two-dimensional electron gas",

abstract = "We have performed magnetotransport measurements on gated GaAs two-dimensional electron gases in which electrons are confined in a layer of the nanoscale. From the slopes of a pair of spin-split Landau levels (LLs) in the energy-magnetic field plane, we can perform direct measurements of the spin gap for different LLs. The measured g-factor g is greatly enhanced over its bulk value in GaAs (0.44) due to electron-electron (e-e) interactions. Our results suggest that both the spin gap and g determined from conventional activation energy studies can be very different from those obtained by direct measurements.",

keywords = "Disorder, G-factor, Spin",

author = "Huang, \{Tsai Yu\} and Liang, \{Chi Te\} and Chen, \{Yang Fang\} and Simmons, \{Michelle Y.\} and Kim, \{Gil Ho\} and Ritchie, \{David A.\}",

year = "2013",

doi = "10.1186/1556-276X-8-138",

language = "English",

volume = "8",

pages = "1--6",

journal = "Nanoscale Research Letters",

issn = "1931-7573",

publisher = "Springer New York",

number = "1",

}

TY - JOUR

T1 - Direct measurement of the spin gaps in a gated GaAs two-dimensional electron gas

AU - Huang, Tsai Yu

AU - Liang, Chi Te

AU - Chen, Yang Fang

AU - Simmons, Michelle Y.

AU - Kim, Gil Ho

AU - Ritchie, David A.

PY - 2013

Y1 - 2013

N2 - We have performed magnetotransport measurements on gated GaAs two-dimensional electron gases in which electrons are confined in a layer of the nanoscale. From the slopes of a pair of spin-split Landau levels (LLs) in the energy-magnetic field plane, we can perform direct measurements of the spin gap for different LLs. The measured g-factor g is greatly enhanced over its bulk value in GaAs (0.44) due to electron-electron (e-e) interactions. Our results suggest that both the spin gap and g determined from conventional activation energy studies can be very different from those obtained by direct measurements.

AB - We have performed magnetotransport measurements on gated GaAs two-dimensional electron gases in which electrons are confined in a layer of the nanoscale. From the slopes of a pair of spin-split Landau levels (LLs) in the energy-magnetic field plane, we can perform direct measurements of the spin gap for different LLs. The measured g-factor g is greatly enhanced over its bulk value in GaAs (0.44) due to electron-electron (e-e) interactions. Our results suggest that both the spin gap and g determined from conventional activation energy studies can be very different from those obtained by direct measurements.

KW - Disorder

KW - G-factor

KW - Spin

UR - https://www.scopus.com/pages/publications/84876903167

U2 - 10.1186/1556-276X-8-138

DO - 10.1186/1556-276X-8-138

M3 - Article

AN - SCOPUS:84876903167

SN - 1931-7573

VL - 8

SP - 1

EP - 6

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 1

M1 - 138

ER -

Direct measurement of the spin gaps in a gated GaAs two-dimensional electron gas

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this