TY - JOUR
T1 - Diffusion length and resistivity distribution characteristics of silicon wafer by photoluminescence
AU - Baek, Dohyun
AU - Lee, Jaehyeong
AU - Choi, Byoungdeog
PY - 2014/10
Y1 - 2014/10
N2 - Photoluminescence is a convenient, contactless method to characterize semiconductors. Its use for room-temperature silicon characterization has only recently been implemented. We have developed the PL efficiency theory as a function of substrate doping densities, bulk trap density, photon flux density, and reflectance and compared it with experimental data initially for bulk Si wafers. New developed PL intensity ratio method is able to predict the silicon wafer properties, such as doping densities, minority carrier diffusion length and bulk trap density.
AB - Photoluminescence is a convenient, contactless method to characterize semiconductors. Its use for room-temperature silicon characterization has only recently been implemented. We have developed the PL efficiency theory as a function of substrate doping densities, bulk trap density, photon flux density, and reflectance and compared it with experimental data initially for bulk Si wafers. New developed PL intensity ratio method is able to predict the silicon wafer properties, such as doping densities, minority carrier diffusion length and bulk trap density.
KW - A. Semiconductors
KW - B. Luminescence
KW - B. Optical properties
KW - D. Diffusion
KW - D. Electrical properties
UR - https://www.scopus.com/pages/publications/84905912682
U2 - 10.1016/j.materresbull.2014.03.002
DO - 10.1016/j.materresbull.2014.03.002
M3 - Article
AN - SCOPUS:84905912682
SN - 0025-5408
VL - 58
SP - 157
EP - 163
JO - Materials Research Bulletin
JF - Materials Research Bulletin
ER -
