Diffusion length and resistivity distribution characteristics of silicon wafer by photoluminescence

Dohyun Baek; Jaehyeong Lee; Byoungdeog Choi

doi:10.1016/j.materresbull.2014.03.002

Diffusion length and resistivity distribution characteristics of silicon wafer by photoluminescence

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Photoluminescence is a convenient, contactless method to characterize semiconductors. Its use for room-temperature silicon characterization has only recently been implemented. We have developed the PL efficiency theory as a function of substrate doping densities, bulk trap density, photon flux density, and reflectance and compared it with experimental data initially for bulk Si wafers. New developed PL intensity ratio method is able to predict the silicon wafer properties, such as doping densities, minority carrier diffusion length and bulk trap density.

Original language	English
Pages (from-to)	157-163
Number of pages	7
Journal	Materials Research Bulletin
Volume	58
DOIs	https://doi.org/10.1016/j.materresbull.2014.03.002
State	Published - Oct 2014

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

A. Semiconductors
B. Luminescence
B. Optical properties
D. Diffusion
D. Electrical properties

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10.1016/j.materresbull.2014.03.002

Cite this

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title = "Diffusion length and resistivity distribution characteristics of silicon wafer by photoluminescence",

abstract = "Photoluminescence is a convenient, contactless method to characterize semiconductors. Its use for room-temperature silicon characterization has only recently been implemented. We have developed the PL efficiency theory as a function of substrate doping densities, bulk trap density, photon flux density, and reflectance and compared it with experimental data initially for bulk Si wafers. New developed PL intensity ratio method is able to predict the silicon wafer properties, such as doping densities, minority carrier diffusion length and bulk trap density.",

keywords = "A. Semiconductors, B. Luminescence, B. Optical properties, D. Diffusion, D. Electrical properties",

author = "Dohyun Baek and Jaehyeong Lee and Byoungdeog Choi",

year = "2014",

month = oct,

doi = "10.1016/j.materresbull.2014.03.002",

language = "English",

volume = "58",

pages = "157--163",

journal = "Materials Research Bulletin",

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T1 - Diffusion length and resistivity distribution characteristics of silicon wafer by photoluminescence

AU - Baek, Dohyun

AU - Lee, Jaehyeong

AU - Choi, Byoungdeog

PY - 2014/10

Y1 - 2014/10

N2 - Photoluminescence is a convenient, contactless method to characterize semiconductors. Its use for room-temperature silicon characterization has only recently been implemented. We have developed the PL efficiency theory as a function of substrate doping densities, bulk trap density, photon flux density, and reflectance and compared it with experimental data initially for bulk Si wafers. New developed PL intensity ratio method is able to predict the silicon wafer properties, such as doping densities, minority carrier diffusion length and bulk trap density.

AB - Photoluminescence is a convenient, contactless method to characterize semiconductors. Its use for room-temperature silicon characterization has only recently been implemented. We have developed the PL efficiency theory as a function of substrate doping densities, bulk trap density, photon flux density, and reflectance and compared it with experimental data initially for bulk Si wafers. New developed PL intensity ratio method is able to predict the silicon wafer properties, such as doping densities, minority carrier diffusion length and bulk trap density.

KW - A. Semiconductors

KW - B. Luminescence

KW - B. Optical properties

KW - D. Diffusion

KW - D. Electrical properties

UR - https://www.scopus.com/pages/publications/84905912682

U2 - 10.1016/j.materresbull.2014.03.002

DO - 10.1016/j.materresbull.2014.03.002

M3 - Article

AN - SCOPUS:84905912682

SN - 0025-5408

VL - 58

SP - 157

EP - 163

JO - Materials Research Bulletin

JF - Materials Research Bulletin

ER -

Diffusion length and resistivity distribution characteristics of silicon wafer by photoluminescence

Abstract

UN SDGs

Keywords

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