Dielectric behavior of BaTiO3/SrTiO3 oxide artificial lattice by strain manipulation

Juho Kim; Leejun Kim; Donggeun Jung; Jaichan Lee

doi:10.1080/10584580390259696

Dielectric behavior of BaTiO₃/SrTiO₃ oxide artificial lattice by strain manipulation

Juho Kim, Leejun Kim, Donggeun Jung, Jaichan Lee

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

BaTiO₃ (BTO)/SiTiO₃ (STO) artificial lattices have been deposited on (La,Sr)CoO₃/MgO (100) substrate by pulsed laser deposition (PLD). Strain manipulation in the oxide artificial lattice was carried out by varying stacking sequence and period of BTO and STO layers with layer-by-layer growth technique. A wide variation of the lattice distortion for both BTO and STO layers has been obtained from this strain manipulation. The dielectric constant of the BTO and STO lattices was sensitively influenced by the lattice distortion. Moreover, it is found that there exist a certain degree of lattice distortion of the strained BTO and STO lattices leading to a maximum value of their own dielectric constant of the BTO and STO lattices. Consequently, an appropriate combination of stacking period and sequence (resulting in a specific lattice distortion) led to the large dielectric constant (1230) and extremely large tunability (94%) in the BTO/STO oxide artificial lattice.

Original language	English
Pages (from-to)	1327-1335
Number of pages	9
Journal	Integrated Ferroelectrics
Volume	58
DOIs	https://doi.org/10.1080/10584580390259696
State	Published - 2003

Keywords

Artificial lattice
BTO/STO
Strain manipulation

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10.1080/10584580390259696

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@article{fc490672da554fc49466effd20d84a44,

title = "Dielectric behavior of BaTiO3/SrTiO3 oxide artificial lattice by strain manipulation",

abstract = "BaTiO3 (BTO)/SiTiO3 (STO) artificial lattices have been deposited on (La,Sr)CoO3/MgO (100) substrate by pulsed laser deposition (PLD). Strain manipulation in the oxide artificial lattice was carried out by varying stacking sequence and period of BTO and STO layers with layer-by-layer growth technique. A wide variation of the lattice distortion for both BTO and STO layers has been obtained from this strain manipulation. The dielectric constant of the BTO and STO lattices was sensitively influenced by the lattice distortion. Moreover, it is found that there exist a certain degree of lattice distortion of the strained BTO and STO lattices leading to a maximum value of their own dielectric constant of the BTO and STO lattices. Consequently, an appropriate combination of stacking period and sequence (resulting in a specific lattice distortion) led to the large dielectric constant (1230) and extremely large tunability (94\%) in the BTO/STO oxide artificial lattice.",

keywords = "Artificial lattice, BTO/STO, Strain manipulation",

author = "Juho Kim and Leejun Kim and Donggeun Jung and Jaichan Lee",

year = "2003",

doi = "10.1080/10584580390259696",

language = "English",

volume = "58",

pages = "1327--1335",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

}

TY - JOUR

T1 - Dielectric behavior of BaTiO3/SrTiO3 oxide artificial lattice by strain manipulation

AU - Kim, Juho

AU - Kim, Leejun

AU - Jung, Donggeun

AU - Lee, Jaichan

PY - 2003

Y1 - 2003

N2 - BaTiO3 (BTO)/SiTiO3 (STO) artificial lattices have been deposited on (La,Sr)CoO3/MgO (100) substrate by pulsed laser deposition (PLD). Strain manipulation in the oxide artificial lattice was carried out by varying stacking sequence and period of BTO and STO layers with layer-by-layer growth technique. A wide variation of the lattice distortion for both BTO and STO layers has been obtained from this strain manipulation. The dielectric constant of the BTO and STO lattices was sensitively influenced by the lattice distortion. Moreover, it is found that there exist a certain degree of lattice distortion of the strained BTO and STO lattices leading to a maximum value of their own dielectric constant of the BTO and STO lattices. Consequently, an appropriate combination of stacking period and sequence (resulting in a specific lattice distortion) led to the large dielectric constant (1230) and extremely large tunability (94%) in the BTO/STO oxide artificial lattice.

AB - BaTiO3 (BTO)/SiTiO3 (STO) artificial lattices have been deposited on (La,Sr)CoO3/MgO (100) substrate by pulsed laser deposition (PLD). Strain manipulation in the oxide artificial lattice was carried out by varying stacking sequence and period of BTO and STO layers with layer-by-layer growth technique. A wide variation of the lattice distortion for both BTO and STO layers has been obtained from this strain manipulation. The dielectric constant of the BTO and STO lattices was sensitively influenced by the lattice distortion. Moreover, it is found that there exist a certain degree of lattice distortion of the strained BTO and STO lattices leading to a maximum value of their own dielectric constant of the BTO and STO lattices. Consequently, an appropriate combination of stacking period and sequence (resulting in a specific lattice distortion) led to the large dielectric constant (1230) and extremely large tunability (94%) in the BTO/STO oxide artificial lattice.

KW - Artificial lattice

KW - BTO/STO

KW - Strain manipulation

UR - https://www.scopus.com/pages/publications/33244458553

U2 - 10.1080/10584580390259696

DO - 10.1080/10584580390259696

M3 - Article

AN - SCOPUS:33244458553

SN - 1058-4587

VL - 58

SP - 1327

EP - 1335

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

ER -

Dielectric behavior of BaTiO₃/SrTiO₃ oxide artificial lattice by strain manipulation

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Keywords

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