TY - JOUR
T1 - Development of tin (II) sulfide nanostructured films with uniform surface morphology by two-step growth process
AU - Nandanapalli, Koteeswara Reddy
AU - Mudusu, Devika
AU - Lingandhinne, Raja Mohan Reddy
AU - Mitta, Sekhar Babu
AU - K. Reddy, Gunasekhar
AU - Karuppannan, Ramesh
AU - Whang, Dongmok
N1 - Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2019/1/5
Y1 - 2019/1/5
N2 - Tin (II) sulfide (SnS), one of the most abundant materials, is being considered as an absorber material for the development of low-cost and nontoxic solar cell devices. In this direction, we have developed nanocrystalline films of SnS with uniform morphology on different substrates by adopting two-step thermal evaporation process. The surface studies show that irrespective of substrate nature, the as-grown SnS films possess uniform surface-morphology with well-defined facets. Structural studies reveal that SnS films grown on various substrates possess an orthorhombic crystal structure. However, as compared to other substrates, the structures developed on sapphire and copper exhibit 〈010〉 as preferential growth direction. From the electrical measurements, it is noticed that the films deposited on highly-conductive substrates consist of low electrical resistance, whereas the films are slightly resistive on insulating substrates. Based on these investigations it is emphasized that high-quality SnS films can be developed with uniform morphology on any substrates by adopting our two-step process.
AB - Tin (II) sulfide (SnS), one of the most abundant materials, is being considered as an absorber material for the development of low-cost and nontoxic solar cell devices. In this direction, we have developed nanocrystalline films of SnS with uniform morphology on different substrates by adopting two-step thermal evaporation process. The surface studies show that irrespective of substrate nature, the as-grown SnS films possess uniform surface-morphology with well-defined facets. Structural studies reveal that SnS films grown on various substrates possess an orthorhombic crystal structure. However, as compared to other substrates, the structures developed on sapphire and copper exhibit 〈010〉 as preferential growth direction. From the electrical measurements, it is noticed that the films deposited on highly-conductive substrates consist of low electrical resistance, whereas the films are slightly resistive on insulating substrates. Based on these investigations it is emphasized that high-quality SnS films can be developed with uniform morphology on any substrates by adopting our two-step process.
KW - Earth-abundant material
KW - Low-cost solar cell devices
KW - Low-resistive films
KW - Nanocrystallites
KW - SnS films
KW - Thermal evaporation
UR - https://www.scopus.com/pages/publications/85051928116
U2 - 10.1016/j.jallcom.2018.08.137
DO - 10.1016/j.jallcom.2018.08.137
M3 - Article
AN - SCOPUS:85051928116
SN - 0925-8388
VL - 770
SP - 600
EP - 607
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
ER -