Development of p-type amorphous silicon oxide - Nano crystalline silicon double layer and its application in n-i-p type amorphous silicon solar cell

Sangho Kim; S. M. Iftiquar; Jinjoo Park; Duy Phong Pham; Chonghoon Shin; Junsin Yi

doi:10.1109/PVSC.2016.7749684

Development of p-type amorphous silicon oxide - Nano crystalline silicon double layer and its application in n-i-p type amorphous silicon solar cell

Sangho Kim
, S. M. Iftiquar
, Jinjoo Park
, Duy Phong Pham
, Chonghoon Shin
, Junsin Yi

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Single junction n-i-p type amorphous silicon solar cell was investigated with various p-type window layers. A high doped silicon oxide (P1) layer was used to extract holes from the active layer while a highly conducting micro-crystalline silicon p-type layer was used as an electrical contact layer with the transparent conducting oxide front electrode. When electrical conductivity of the second (P2) layer was raised (to 1.1 S.cm^-1) the open circuit voltage and short circuit current density of the cells increased. This P2 layer was placed in between P1 and front electrode. Optical band gap of the p-type layers remain close to 2.0 eV. With an optimum fabrication condition of the p-layers, the open circuit voltage and short circuit current density of the cells were found to reach 900 mV and 11 mA/cm² respectively.

Original language	English
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	668-671
Number of pages	4
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749684
State	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (Print)	0160-8371

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

amorphous materials
photovoltaic cells
silicon
wide band gap semiconductors

Access to Document

10.1109/PVSC.2016.7749684

Cite this

Kim, S., Iftiquar, S. M., Park, J., Pham, D. P., Shin, C., & Yi, J. (2016). Development of p-type amorphous silicon oxide - Nano crystalline silicon double layer and its application in n-i-p type amorphous silicon solar cell. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 668-671). Article 7749684 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749684

Kim, Sangho ; Iftiquar, S. M. ; Park, Jinjoo et al. / Development of p-type amorphous silicon oxide - Nano crystalline silicon double layer and its application in n-i-p type amorphous silicon solar cell. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 668-671 (Conference Record of the IEEE Photovoltaic Specialists Conference).

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title = "Development of p-type amorphous silicon oxide - Nano crystalline silicon double layer and its application in n-i-p type amorphous silicon solar cell",

abstract = "Single junction n-i-p type amorphous silicon solar cell was investigated with various p-type window layers. A high doped silicon oxide (P1) layer was used to extract holes from the active layer while a highly conducting micro-crystalline silicon p-type layer was used as an electrical contact layer with the transparent conducting oxide front electrode. When electrical conductivity of the second (P2) layer was raised (to 1.1 S.cm-1) the open circuit voltage and short circuit current density of the cells increased. This P2 layer was placed in between P1 and front electrode. Optical band gap of the p-type layers remain close to 2.0 eV. With an optimum fabrication condition of the p-layers, the open circuit voltage and short circuit current density of the cells were found to reach 900 mV and 11 mA/cm2 respectively.",

keywords = "amorphous materials, photovoltaic cells, silicon, wide band gap semiconductors",

author = "Sangho Kim and Iftiquar, \{S. M.\} and Jinjoo Park and Pham, \{Duy Phong\} and Chonghoon Shin and Junsin Yi",

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doi = "10.1109/PVSC.2016.7749684",

language = "English",

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Kim, S, Iftiquar, SM, Park, J, Pham, DP, Shin, C & Yi, J 2016, Development of p-type amorphous silicon oxide - Nano crystalline silicon double layer and its application in n-i-p type amorphous silicon solar cell. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7749684, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 668-671, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16. https://doi.org/10.1109/PVSC.2016.7749684

Development of p-type amorphous silicon oxide - Nano crystalline silicon double layer and its application in n-i-p type amorphous silicon solar cell. / Kim, Sangho; Iftiquar, S. M.; Park, Jinjoo et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 668-671 7749684 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Development of p-type amorphous silicon oxide - Nano crystalline silicon double layer and its application in n-i-p type amorphous silicon solar cell

AU - Kim, Sangho

AU - Iftiquar, S. M.

AU - Park, Jinjoo

AU - Pham, Duy Phong

AU - Shin, Chonghoon

AU - Yi, Junsin

PY - 2016/11/18

Y1 - 2016/11/18

N2 - Single junction n-i-p type amorphous silicon solar cell was investigated with various p-type window layers. A high doped silicon oxide (P1) layer was used to extract holes from the active layer while a highly conducting micro-crystalline silicon p-type layer was used as an electrical contact layer with the transparent conducting oxide front electrode. When electrical conductivity of the second (P2) layer was raised (to 1.1 S.cm-1) the open circuit voltage and short circuit current density of the cells increased. This P2 layer was placed in between P1 and front electrode. Optical band gap of the p-type layers remain close to 2.0 eV. With an optimum fabrication condition of the p-layers, the open circuit voltage and short circuit current density of the cells were found to reach 900 mV and 11 mA/cm2 respectively.

AB - Single junction n-i-p type amorphous silicon solar cell was investigated with various p-type window layers. A high doped silicon oxide (P1) layer was used to extract holes from the active layer while a highly conducting micro-crystalline silicon p-type layer was used as an electrical contact layer with the transparent conducting oxide front electrode. When electrical conductivity of the second (P2) layer was raised (to 1.1 S.cm-1) the open circuit voltage and short circuit current density of the cells increased. This P2 layer was placed in between P1 and front electrode. Optical band gap of the p-type layers remain close to 2.0 eV. With an optimum fabrication condition of the p-layers, the open circuit voltage and short circuit current density of the cells were found to reach 900 mV and 11 mA/cm2 respectively.

KW - amorphous materials

KW - photovoltaic cells

KW - silicon

KW - wide band gap semiconductors

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BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Kim S, Iftiquar SM, Park J, Pham DP, Shin C, Yi J. Development of p-type amorphous silicon oxide - Nano crystalline silicon double layer and its application in n-i-p type amorphous silicon solar cell. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 668-671. 7749684. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2016.7749684

Development of p-type amorphous silicon oxide - Nano crystalline silicon double layer and its application in n-i-p type amorphous silicon solar cell

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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