TY - GEN
T1 - Design optimization of dual material gate nano sheet field effect transistors
AU - Joung, Saehoon
AU - Kim, Soyoung
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/1
Y1 - 2020/1
N2 - Recently, nano-sheet transistors are getting much attention as to overcome the limitation of current FinFET technology. To further enhance the performance of nano-sheet transistors, we propose a new device that consists of a metal gate material with two different work functions. In this way, we can reduce the electric field change on the drain side and make the device with better short channel effect resistance. In addition, we present a work function combination that provides the most optimal device characteristics improvement when using two materials.
AB - Recently, nano-sheet transistors are getting much attention as to overcome the limitation of current FinFET technology. To further enhance the performance of nano-sheet transistors, we propose a new device that consists of a metal gate material with two different work functions. In this way, we can reduce the electric field change on the drain side and make the device with better short channel effect resistance. In addition, we present a work function combination that provides the most optimal device characteristics improvement when using two materials.
KW - Dual material gate
KW - Dual workfunction
KW - Metal gate
KW - Nano-sheet transistor
UR - https://www.scopus.com/pages/publications/85083498077
U2 - 10.1109/ICEIC49074.2020.9051286
DO - 10.1109/ICEIC49074.2020.9051286
M3 - Conference contribution
AN - SCOPUS:85083498077
T3 - 2020 International Conference on Electronics, Information, and Communication, ICEIC 2020
BT - 2020 International Conference on Electronics, Information, and Communication, ICEIC 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 International Conference on Electronics, Information, and Communication, ICEIC 2020
Y2 - 19 January 2020 through 22 January 2020
ER -