TY - GEN
T1 - Design of two-stage fully-integrated CMOS power amplifier for K-band applications
AU - Kim, Hyunjun
AU - Bae, Jongseok
AU - Oh, Sungjae
AU - Lim, Wonseob
AU - Yang, Youngoo
N1 - Publisher Copyright:
© 2017 Global IT Research Institute - GiRI.
PY - 2017/3/29
Y1 - 2017/3/29
N2 - This paper presents a K-band power amplifier integrated circuit using Samsung 65 nm CMOS process. The power amplifier adopts two-stage configuration for high power gain. The input, output, and inter-stage transformers are integrated. By neutralizing gate-drain capacitance using cross-coupled capacitors, the power gain and stability were improved. Its chip size is 0.78 × 0.62 mm2. The implemented two-stage power amplifier showed a power gain of 19.6 dB, a saturated output power of 13.5 dBm, and an efficiency of 7.19 % with a supply voltage of 1.1 V at the frequency band of 24 GHz.
AB - This paper presents a K-band power amplifier integrated circuit using Samsung 65 nm CMOS process. The power amplifier adopts two-stage configuration for high power gain. The input, output, and inter-stage transformers are integrated. By neutralizing gate-drain capacitance using cross-coupled capacitors, the power gain and stability were improved. Its chip size is 0.78 × 0.62 mm2. The implemented two-stage power amplifier showed a power gain of 19.6 dB, a saturated output power of 13.5 dBm, and an efficiency of 7.19 % with a supply voltage of 1.1 V at the frequency band of 24 GHz.
KW - CMOS power amplifier
KW - Cross-coupled capacitor (CCC)
KW - Differential power amplifier
KW - Integrated circuit
KW - K-band
UR - https://www.scopus.com/pages/publications/85018498715
U2 - 10.23919/ICACT.2017.7890138
DO - 10.23919/ICACT.2017.7890138
M3 - Conference contribution
AN - SCOPUS:85018498715
T3 - International Conference on Advanced Communication Technology, ICACT
SP - 493
EP - 496
BT - 19th International Conference on Advanced Communications Technology
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 19th International Conference on Advanced Communications Technology, ICACT 2017
Y2 - 19 February 2017 through 22 February 2017
ER -