Design of a 40Watt Ultra broadband linear power amplifier using LDMOSFETs

  • Mincheol Seo
  • , Kyungwon Kim
  • , Minsu Kim
  • , Hyungchul Kim
  • , Jeongbae Jeon
  • , Jaewoo Sim
  • , Myungkyu Park
  • , Youngoo Yang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

A 40Watt linear power amplifier based on silicon LDMOSFETs is presented. It has ultra broadband characteristics from 2 to 512MHz. The proposed amplifier has a push-pull structure using Guanella 11 and 14 transmission line transformers for its input and output baluns, respectively. A negative feedback network is also adopted for broadband operation with a flat gain response. To achieve high linearity, the bias condition for almost class-A operation is applied. Based on the proposed concept, a two-stage broadband amplifier is implemented. A P1dB of more than 40Watt (46dBm) is achieved over the entire frequency band. The implemented power amplifier exhibits a power gain response of 43.3 ±1.8dB and a PAE of greater than 28.3% at each P1dB over the band. The second- and third-harmonic distortions are below 28.5dBc and 19dBc at each P1dB, respectively. Furthermore, at an average output power level of 41dBm for the two-tone signal input, which has a tone spacing of 1MHz, the IMD3 over the entire band is below 30.1dBc.

Original languageEnglish
Title of host publication2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010
Pages414-417
Number of pages4
StatePublished - 2010
Event2010 Asia-Pacific Microwave Conference, APMC 2010 - Yokohama, Japan
Duration: 7 Dec 201010 Dec 2010

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2010 Asia-Pacific Microwave Conference, APMC 2010
Country/TerritoryJapan
CityYokohama
Period7/12/1010/12/10

Keywords

  • broadband impedance transformer
  • Broadband power amplifier
  • feedback
  • push-pull

Fingerprint

Dive into the research topics of 'Design of a 40Watt Ultra broadband linear power amplifier using LDMOSFETs'. Together they form a unique fingerprint.

Cite this