Design and Optimization of Emitter Configurations for High-Efficiency p-Type Tunnel Oxide Passivated Contact Solar Cells

This study investigates the performance optimization of p-type tunnel oxide passivated contact (p-TOPCon) solar cells through comparative analysis of front and rear emitter configurations. The objective is to address efficiency limitations by identifying which architecture offers superior electrical performance, thereby informing optimal design strategies for industrial applications. Numerical simulations are conducted using the Quokka3 tool to evaluate the impact of emitter placement, wafer resistivity, bulk carrier lifetime, and contact selectivity under identical conditions. Results indicate that the rear emitter configuration delivers better passivation and a higher open-circuit voltage (V_oc = 715 mV), achieving a peak efficiency of 24.21%, while the front emitter design demonstrates advantages in light absorption and fabrication simplicity. Future work will extend the analysis to include n-type polycrystalline silicon contacts and explore manufacturable pathways to further increase efficiency in commercial p-TOPCon cells.