Design and analysis of GaN FET-based resonant dc-dc converter

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

This paper presents a design consideration of GaN FET-based resonant dc-dc converter, and the efficiency and ZVS characteristics of the resonant dc-dc converter based on GaN FET parameters are theoretically analyzed. To verify the validity of analysis, a 600W phase-shift full-bridge dc-dc converter is designed and implemented. The faulty turn-on and ZVS issue caused by GaN FET characteristics are analyzed and their improvement ideas are presented.

Original languageEnglish
Title of host publication9th International Conference on Power Electronics - ECCE Asia
Subtitle of host publication"Green World with Power Electronics", ICPE 2015-ECCE Asia
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2650-2655
Number of pages6
ISBN (Electronic)9788957082546
DOIs
StatePublished - 27 Jul 2015
Event9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia - Seoul, Korea, Republic of
Duration: 1 Jun 20155 Jun 2015

Publication series

Name9th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2015-ECCE Asia

Conference

Conference9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia
Country/TerritoryKorea, Republic of
CitySeoul
Period1/06/155/06/15

Keywords

  • GaN FET
  • high efficiency
  • PCB layout
  • resonant dc-dc converter
  • switching devices
  • wide bandgap device

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