Depth-controllable ultra shallow indium gallium zinc oxide/gallium arsenide hetero junction diode

Seong Uk Yang; Seung Ha Choi; Jongtaek Lee; Jeehwan Kim; Woo Shik Jung; Hyun Yong Yu; Yonghan Roh; Jin Hong Park

doi:10.1016/j.jallcom.2013.02.012

Depth-controllable ultra shallow indium gallium zinc oxide/gallium arsenide hetero junction diode

Seong Uk Yang, Seung Ha Choi, Jongtaek Lee, Jeehwan Kim, Woo Shik Jung, Hyun Yong Yu, Yonghan Roh, Jin Hong Park

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Letter › peer-review

4 Scopus citations

Abstract

One of the challenges for the III-V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow junction diode. In this letter, we demonstrate a junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-junction diode at a low temperature (300 °C). Through TOF-SIMS, J-V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs junctions are carefully investigated. Oncurrent density (0.02 A/cm²) and on/off-current ratio (4 × 10²) were obtained in the junction annealed at 300 °C. Additionally, the effect of n-IGZO thickness control on junction current is investigated, comparing 15 nm and 30 nm thick n-IGZO samples.

Original language	English
Pages (from-to)	228-230
Number of pages	3
Journal	Journal of Alloys and Compounds
Volume	561
DOIs	https://doi.org/10.1016/j.jallcom.2013.02.012
State	Published - 5 Jun 2013

Keywords

Gallium arsenide
Hetero-junction
IGZO

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10.1016/j.jallcom.2013.02.012

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title = "Depth-controllable ultra shallow indium gallium zinc oxide/gallium arsenide hetero junction diode",

abstract = "One of the challenges for the III-V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow junction diode. In this letter, we demonstrate a junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-junction diode at a low temperature (300 °C). Through TOF-SIMS, J-V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs junctions are carefully investigated. Oncurrent density (0.02 A/cm2) and on/off-current ratio (4 × 102) were obtained in the junction annealed at 300 °C. Additionally, the effect of n-IGZO thickness control on junction current is investigated, comparing 15 nm and 30 nm thick n-IGZO samples.",

keywords = "Gallium arsenide, Hetero-junction, IGZO",

author = "Yang, \{Seong Uk\} and Choi, \{Seung Ha\} and Jongtaek Lee and Jeehwan Kim and Jung, \{Woo Shik\} and Yu, \{Hyun Yong\} and Yonghan Roh and Park, \{Jin Hong\}",

year = "2013",

month = jun,

day = "5",

doi = "10.1016/j.jallcom.2013.02.012",

language = "English",

volume = "561",

pages = "228--230",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Depth-controllable ultra shallow indium gallium zinc oxide/gallium arsenide hetero junction diode

AU - Yang, Seong Uk

AU - Choi, Seung Ha

AU - Lee, Jongtaek

AU - Kim, Jeehwan

AU - Jung, Woo Shik

AU - Yu, Hyun Yong

AU - Roh, Yonghan

AU - Park, Jin Hong

PY - 2013/6/5

Y1 - 2013/6/5

N2 - One of the challenges for the III-V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow junction diode. In this letter, we demonstrate a junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-junction diode at a low temperature (300 °C). Through TOF-SIMS, J-V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs junctions are carefully investigated. Oncurrent density (0.02 A/cm2) and on/off-current ratio (4 × 102) were obtained in the junction annealed at 300 °C. Additionally, the effect of n-IGZO thickness control on junction current is investigated, comparing 15 nm and 30 nm thick n-IGZO samples.

AB - One of the challenges for the III-V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow junction diode. In this letter, we demonstrate a junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-junction diode at a low temperature (300 °C). Through TOF-SIMS, J-V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs junctions are carefully investigated. Oncurrent density (0.02 A/cm2) and on/off-current ratio (4 × 102) were obtained in the junction annealed at 300 °C. Additionally, the effect of n-IGZO thickness control on junction current is investigated, comparing 15 nm and 30 nm thick n-IGZO samples.

KW - Gallium arsenide

KW - Hetero-junction

KW - IGZO

UR - https://www.scopus.com/pages/publications/84874636671

U2 - 10.1016/j.jallcom.2013.02.012

DO - 10.1016/j.jallcom.2013.02.012

M3 - Letter

AN - SCOPUS:84874636671

SN - 0925-8388

VL - 561

SP - 228

EP - 230

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Depth-controllable ultra shallow indium gallium zinc oxide/gallium arsenide hetero junction diode

Abstract

Keywords

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