Deposition of SiO2 by plasma enhanced chemical vapor deposition as the diffusion barrier to polymer substrates

Chang Hyun Jeong; June Hee Lee; Jong Tae Lim; Nam Gil Cho; Cheol Hee Moon; Geun Young Yeom

doi:10.1143/JJAP.44.1022

Deposition of SiO₂ by plasma enhanced chemical vapor deposition as the diffusion barrier to polymer substrates

Chang Hyun Jeong
, June Hee Lee
, Jong Tae Lim
, Nam Gil Cho
, Cheol Hee Moon
, Geun Young Yeom

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

SiO₂ thin films were deposited at the temperatures < 150°C by plasma enhanced chemical vapor deposition (PECVD) using a tetraethylorthosilicate (TEOS)/N2/O2 gas mixture, and the physical and chemical characteristics as well as the characteristics as a transparent diffusion barrier to H₂O were investigated. Using a gas combination of TEOS(40 sccm)/O₂(500 seem)/ N₂(100sccm) at source power of 500 W and dc bias voltage of-350V, SiO₂ with a stoichometric composition of SiO₂ and a smooth surface similar to the substrate could be deposited. When a multilayer diffusion barrier composed of parylene(800nm)/SiO₂(100nm)/parylene(800nm)/SiO ₂(100nm)/parylene(800nm) was formed on a polyethersulfone (PES) substrate, the water vapor transmission rate (WVTR) of the substrate was decreased from 54.1 to 0.3 gm/ (m²-day).

Original language	English
Pages (from-to)	1022-1026
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	44
Issue number	2
DOIs	https://doi.org/10.1143/JJAP.44.1022
State	Published - Feb 2005

Keywords

Low temperature
Parylene
PECVD
Polymer substrate
SiO

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@article{237a39be836046fc9c968f1170f824e2,

title = "Deposition of SiO2 by plasma enhanced chemical vapor deposition as the diffusion barrier to polymer substrates",

abstract = "SiO2 thin films were deposited at the temperatures < 150°C by plasma enhanced chemical vapor deposition (PECVD) using a tetraethylorthosilicate (TEOS)/N2/O2 gas mixture, and the physical and chemical characteristics as well as the characteristics as a transparent diffusion barrier to H2O were investigated. Using a gas combination of TEOS(40 sccm)/O2(500 seem)/ N2(100sccm) at source power of 500 W and dc bias voltage of-350V, SiO2 with a stoichometric composition of SiO2 and a smooth surface similar to the substrate could be deposited. When a multilayer diffusion barrier composed of parylene(800nm)/SiO2(100nm)/parylene(800nm)/SiO 2(100nm)/parylene(800nm) was formed on a polyethersulfone (PES) substrate, the water vapor transmission rate (WVTR) of the substrate was decreased from 54.1 to 0.3 gm/ (m2-day).",

keywords = "Low temperature, Parylene, PECVD, Polymer substrate, SiO",

author = "Jeong, \{Chang Hyun\} and Lee, \{June Hee\} and Lim, \{Jong Tae\} and Cho, \{Nam Gil\} and Moon, \{Cheol Hee\} and Yeom, \{Geun Young\}",

year = "2005",

month = feb,

doi = "10.1143/JJAP.44.1022",

language = "English",

volume = "44",

pages = "1022--1026",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "2",

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TY - JOUR

T1 - Deposition of SiO2 by plasma enhanced chemical vapor deposition as the diffusion barrier to polymer substrates

AU - Jeong, Chang Hyun

AU - Lee, June Hee

AU - Lim, Jong Tae

AU - Cho, Nam Gil

AU - Moon, Cheol Hee

AU - Yeom, Geun Young

PY - 2005/2

Y1 - 2005/2

N2 - SiO2 thin films were deposited at the temperatures < 150°C by plasma enhanced chemical vapor deposition (PECVD) using a tetraethylorthosilicate (TEOS)/N2/O2 gas mixture, and the physical and chemical characteristics as well as the characteristics as a transparent diffusion barrier to H2O were investigated. Using a gas combination of TEOS(40 sccm)/O2(500 seem)/ N2(100sccm) at source power of 500 W and dc bias voltage of-350V, SiO2 with a stoichometric composition of SiO2 and a smooth surface similar to the substrate could be deposited. When a multilayer diffusion barrier composed of parylene(800nm)/SiO2(100nm)/parylene(800nm)/SiO 2(100nm)/parylene(800nm) was formed on a polyethersulfone (PES) substrate, the water vapor transmission rate (WVTR) of the substrate was decreased from 54.1 to 0.3 gm/ (m2-day).

AB - SiO2 thin films were deposited at the temperatures < 150°C by plasma enhanced chemical vapor deposition (PECVD) using a tetraethylorthosilicate (TEOS)/N2/O2 gas mixture, and the physical and chemical characteristics as well as the characteristics as a transparent diffusion barrier to H2O were investigated. Using a gas combination of TEOS(40 sccm)/O2(500 seem)/ N2(100sccm) at source power of 500 W and dc bias voltage of-350V, SiO2 with a stoichometric composition of SiO2 and a smooth surface similar to the substrate could be deposited. When a multilayer diffusion barrier composed of parylene(800nm)/SiO2(100nm)/parylene(800nm)/SiO 2(100nm)/parylene(800nm) was formed on a polyethersulfone (PES) substrate, the water vapor transmission rate (WVTR) of the substrate was decreased from 54.1 to 0.3 gm/ (m2-day).

KW - Low temperature

KW - Parylene

KW - PECVD

KW - Polymer substrate

KW - SiO

UR - https://www.scopus.com/pages/publications/17444397120

U2 - 10.1143/JJAP.44.1022

DO - 10.1143/JJAP.44.1022

M3 - Article

AN - SCOPUS:17444397120

SN - 0021-4922

VL - 44

SP - 1022

EP - 1026

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 2

ER -

Deposition of SiO₂ by plasma enhanced chemical vapor deposition as the diffusion barrier to polymer substrates

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Keywords

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