Deposition of CeO₂ buffer layers for YBCO coated conductors on biaxially textured Ni substrates by MOCVD technique

CeO₂ buffer layers for YBa₂Cu₃O₇(YBCO) coated conductors were deposited on biaxially textured Ni substrates by metalorganic chemical vapor deposition (MOCVD) method. The variables were the oxygen partial pressure (P_O2) deposition temperature and time. The (200) texture of CeO₂ was formed at T = 500 °C-520 °C, t = 3-15 min and P_O2 = 2.30 torr, while the (111) and (200) texture were competitively formed at other condition. The surface roughness of CeO₂ films was as good as 5 -15 nm up to 500 °C, while it rapidly increased as a result of grain growth of the CeO₂ at T ≥ 520 °C. The surface roughness of the CeO₂ films also increased as the deposition time increased. The growth rate of the CeO₂ films at T = 520 °C and P_O2 = 2.30 torr was 200 nm/min, which is much higher than those prepared by other physical deposition methods.