Abstract
AlZnO thin films with various Al/Zn composition ratios were deposited by atomic layer deposition (ALD) at 200 °C. The effect of the composition of the AlZnO films on their electrical and optical characteristics was investigated. The AlZnO films with an Al content of up to 10 at.% showed high conductivity, while further increasing in the Al content resulted in the abrupt formation of an insulating oxide film. The lowest electrical resistivity of the ALD-deposited AlZnO film was 6.5 × 10- 4 [Ω cm] at 5 at.% Al. The AlZnO films with up to 5 at.% Al exhibited crystalline phases and a near-band-edge emission. With increasing Al content, the optical band edge showed a blue shift, and a sudden shift associated with an insulating bandgap was observed in the AlZnO films containing 20 at.% Al.
| Original language | English |
|---|---|
| Pages (from-to) | 747-750 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 519 |
| Issue number | 2 |
| DOIs | |
| State | Published - 1 Nov 2010 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
-
SDG 7 Affordable and Clean Energy
Keywords
- AlZnO
- Atomic layer deposition
- Electrical properties
- Optical properties
- Structural properties
- Ternary oxides
- Thin films
- Transparent conducting oxide
Fingerprint
Dive into the research topics of 'Deposition of Al doped ZnO layers with various electrical types by atomic layer deposition'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver