Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature

M. G. Park; W. S. Choi; B. Hong; Y. T. Kim; D. H. Yoon

doi:10.1116/1.1472416

Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature

M. G. Park
, W. S. Choi
, B. Hong
, Y. T. Kim
, D. H. Yoon

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

A Raman spectrophotometer and ultraviolet-visible (UV-Vis) spectrophotometer were used for determining optical properties, and current-voltage (I-V) measurements for electrical properties. Thin films of a-SiC:H were prepared by the glow discharge decomposition of SiH₄ and CH₄ gas mixture. The change of the properties with the rf power and annealing temperature was evaluated. The results confirm that the a-SiC:H thin films are more stable than former carbon free a-Si thin films in optical and electrical characteristics, as well as being more thermally stable.

Original language	English
Pages (from-to)	861-864
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1472416
State	Published - May 2002

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10.1116/1.1472416

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title = "Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature",

abstract = "A Raman spectrophotometer and ultraviolet-visible (UV-Vis) spectrophotometer were used for determining optical properties, and current-voltage (I-V) measurements for electrical properties. Thin films of a-SiC:H were prepared by the glow discharge decomposition of SiH4 and CH4 gas mixture. The change of the properties with the rf power and annealing temperature was evaluated. The results confirm that the a-SiC:H thin films are more stable than former carbon free a-Si thin films in optical and electrical characteristics, as well as being more thermally stable.",

author = "Park, \{M. G.\} and Choi, \{W. S.\} and B. Hong and Kim, \{Y. T.\} and Yoon, \{D. H.\}",

year = "2002",

month = may,

doi = "10.1116/1.1472416",

language = "English",

volume = "20",

pages = "861--864",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "3",

}

Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature. / Park, M. G.; Choi, W. S.; Hong, B. et al.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 20, No. 3, 05.2002, p. 861-864.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature

AU - Park, M. G.

AU - Choi, W. S.

AU - Hong, B.

AU - Kim, Y. T.

AU - Yoon, D. H.

PY - 2002/5

Y1 - 2002/5

N2 - A Raman spectrophotometer and ultraviolet-visible (UV-Vis) spectrophotometer were used for determining optical properties, and current-voltage (I-V) measurements for electrical properties. Thin films of a-SiC:H were prepared by the glow discharge decomposition of SiH4 and CH4 gas mixture. The change of the properties with the rf power and annealing temperature was evaluated. The results confirm that the a-SiC:H thin films are more stable than former carbon free a-Si thin films in optical and electrical characteristics, as well as being more thermally stable.

AB - A Raman spectrophotometer and ultraviolet-visible (UV-Vis) spectrophotometer were used for determining optical properties, and current-voltage (I-V) measurements for electrical properties. Thin films of a-SiC:H were prepared by the glow discharge decomposition of SiH4 and CH4 gas mixture. The change of the properties with the rf power and annealing temperature was evaluated. The results confirm that the a-SiC:H thin films are more stable than former carbon free a-Si thin films in optical and electrical characteristics, as well as being more thermally stable.

UR - https://www.scopus.com/pages/publications/0036564788

U2 - 10.1116/1.1472416

DO - 10.1116/1.1472416

M3 - Article

AN - SCOPUS:0036564788

SN - 0734-2101

VL - 20

SP - 861

EP - 864

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

ER -

Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature

Abstract

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