Degradation Due to Electrical Stress of Poly-Si Thin Film Transistors with Various LDD Lengths

Yang Sang Kim; Min Koo Han

doi:10.1109/55.790723

Degradation Due to Electrical Stress of Poly-Si Thin Film Transistors with Various LDD Lengths

Yang Sang Kim
, Min Koo Han

Myongji University
Seoul National University

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The degradation phenomena of polycrystalline sili-con (poly-Si) thin film transistors (TFT‘s) with various lightly-doped drain (LDD) length have been investigated. It is observed that the threshold voltage shift due to electrical stress varies with LDD length. The threshold voltage shift after 4 hours electrical stress of Vg = V d = 30 V in conventional, 0.5 µm, and 2 µm LDD poly-Si TFT's are about 2.7 V, 5.2 V, and 0.8 V, respectively.

Original language	English
Pages (from-to)	245-247
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	16
Issue number	6
DOIs	https://doi.org/10.1109/55.790723
State	Published - Jun 1995
Externally published	Yes

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title = "Degradation Due to Electrical Stress of Poly-Si Thin Film Transistors with Various LDD Lengths",

abstract = "The degradation phenomena of polycrystalline sili-con (poly-Si) thin film transistors (TFT{\textquoteleft}s) with various lightly-doped drain (LDD) length have been investigated. It is observed that the threshold voltage shift due to electrical stress varies with LDD length. The threshold voltage shift after 4 hours electrical stress of Vg = V d = 30 V in conventional, 0.5 µm, and 2 µm LDD poly-Si TFT's are about 2.7 V, 5.2 V, and 0.8 V, respectively.",

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year = "1995",

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AU - Han, Min Koo

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N2 - The degradation phenomena of polycrystalline sili-con (poly-Si) thin film transistors (TFT‘s) with various lightly-doped drain (LDD) length have been investigated. It is observed that the threshold voltage shift due to electrical stress varies with LDD length. The threshold voltage shift after 4 hours electrical stress of Vg = V d = 30 V in conventional, 0.5 µm, and 2 µm LDD poly-Si TFT's are about 2.7 V, 5.2 V, and 0.8 V, respectively.

AB - The degradation phenomena of polycrystalline sili-con (poly-Si) thin film transistors (TFT‘s) with various lightly-doped drain (LDD) length have been investigated. It is observed that the threshold voltage shift due to electrical stress varies with LDD length. The threshold voltage shift after 4 hours electrical stress of Vg = V d = 30 V in conventional, 0.5 µm, and 2 µm LDD poly-Si TFT's are about 2.7 V, 5.2 V, and 0.8 V, respectively.

UR - https://www.scopus.com/pages/publications/0010319488

U2 - 10.1109/55.790723

DO - 10.1109/55.790723

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

Degradation Due to Electrical Stress of Poly-Si Thin Film Transistors with Various LDD Lengths

Abstract

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