Defect visualization of Cu(InGa)(SeS)2 thin films using DLTS measurement

Sung Heo; Jae Gwan Chung; Hyung Ik Lee; Junho Lee; Jong Bong Park; Eunae Cho; Ki Hong Kim; Seong Heon Kim; Gyeong Su Park; Dongho Lee; Jaehan Lee; Junggyu Nam; Jung Yup Yang; Dongwha Lee; Hoon Young Cho; Hee Jae Kang; Pyung Ho Choi; Byoung Deog Choi

doi:10.1038/srep30554

Defect visualization of Cu(InGa)(SeS)₂ thin films using DLTS measurement

Sung Heo, Jae Gwan Chung, Hyung Ik Lee, Junho Lee, Jong Bong Park, Eunae Cho, Ki Hong Kim, Seong Heon Kim, Gyeong Su Park, Dongho Lee, Jaehan Lee, Junggyu Nam, Jung Yup Yang, Dongwha Lee, Hoon Young Cho, Hee Jae Kang, Pyung Ho Choi, Byoung Deog Choi

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Defect depth profiles of Cu (In_1−x,Ga_x)(Se_1−yS_y)₂ (CIGSS) were measured as functions of pulse width and voltage via deep-level transient spectroscopy (DLTS). Four defects were observed, i.e., electron traps of ~0.2 eV at 140 K (E1 trap) and 0.47 eV at 300 K (E2 trap) and hole traps of ~0.1 eV at 100 K (H1 trap) and ~0.4 eV at 250 K (H2 trap). The open circuit voltage (V_OC) deteriorated when the trap densities of E2 were increased. The energy band diagrams of CIGSS were also obtained using Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and DLTS data. These results showed that the valence band was lowered at higher S content. In addition, it was found that the E2 defect influenced the V_OC and could be interpreted as an extended defect. Defect depth profile images provided clear insight into the identification of defect state and density as a function of depth around the space charge region.

Original language	English
Article number	30554
Journal	Scientific Reports
Volume	6
Issue number	1
DOIs	https://doi.org/10.1038/srep30554
State	Published - 26 Aug 2016

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@article{46b7a2e74a79477ab99252971531af8c,

title = "Defect visualization of Cu(InGa)(SeS)2 thin films using DLTS measurement",

abstract = "Defect depth profiles of Cu (In1−x,Gax)(Se1−ySy)2 (CIGSS) were measured as functions of pulse width and voltage via deep-level transient spectroscopy (DLTS). Four defects were observed, i.e., electron traps of \textasciitilde{}0.2 eV at 140 K (E1 trap) and 0.47 eV at 300 K (E2 trap) and hole traps of \textasciitilde{}0.1 eV at 100 K (H1 trap) and \textasciitilde{}0.4 eV at 250 K (H2 trap). The open circuit voltage (VOC) deteriorated when the trap densities of E2 were increased. The energy band diagrams of CIGSS were also obtained using Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and DLTS data. These results showed that the valence band was lowered at higher S content. In addition, it was found that the E2 defect influenced the VOC and could be interpreted as an extended defect. Defect depth profile images provided clear insight into the identification of defect state and density as a function of depth around the space charge region.",

author = "Sung Heo and Chung, \{Jae Gwan\} and Lee, \{Hyung Ik\} and Junho Lee and Park, \{Jong Bong\} and Eunae Cho and Kim, \{Ki Hong\} and Kim, \{Seong Heon\} and Park, \{Gyeong Su\} and Dongho Lee and Jaehan Lee and Junggyu Nam and Yang, \{Jung Yup\} and Dongwha Lee and Cho, \{Hoon Young\} and Kang, \{Hee Jae\} and Choi, \{Pyung Ho\} and Choi, \{Byoung Deog\}",

note = "Publisher Copyright: {\textcopyright} 2016, The Author(s).",

year = "2016",

month = aug,

day = "26",

doi = "10.1038/srep30554",

language = "English",

volume = "6",

journal = "Scientific Reports",

issn = "2045-2322",

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T1 - Defect visualization of Cu(InGa)(SeS)2 thin films using DLTS measurement

AU - Heo, Sung

AU - Chung, Jae Gwan

AU - Lee, Hyung Ik

AU - Lee, Junho

AU - Park, Jong Bong

AU - Cho, Eunae

AU - Kim, Ki Hong

AU - Kim, Seong Heon

AU - Park, Gyeong Su

AU - Lee, Dongho

AU - Lee, Jaehan

AU - Nam, Junggyu

AU - Yang, Jung Yup

AU - Lee, Dongwha

AU - Cho, Hoon Young

AU - Kang, Hee Jae

AU - Choi, Pyung Ho

AU - Choi, Byoung Deog

PY - 2016/8/26

Y1 - 2016/8/26

N2 - Defect depth profiles of Cu (In1−x,Gax)(Se1−ySy)2 (CIGSS) were measured as functions of pulse width and voltage via deep-level transient spectroscopy (DLTS). Four defects were observed, i.e., electron traps of ~0.2 eV at 140 K (E1 trap) and 0.47 eV at 300 K (E2 trap) and hole traps of ~0.1 eV at 100 K (H1 trap) and ~0.4 eV at 250 K (H2 trap). The open circuit voltage (VOC) deteriorated when the trap densities of E2 were increased. The energy band diagrams of CIGSS were also obtained using Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and DLTS data. These results showed that the valence band was lowered at higher S content. In addition, it was found that the E2 defect influenced the VOC and could be interpreted as an extended defect. Defect depth profile images provided clear insight into the identification of defect state and density as a function of depth around the space charge region.

AB - Defect depth profiles of Cu (In1−x,Gax)(Se1−ySy)2 (CIGSS) were measured as functions of pulse width and voltage via deep-level transient spectroscopy (DLTS). Four defects were observed, i.e., electron traps of ~0.2 eV at 140 K (E1 trap) and 0.47 eV at 300 K (E2 trap) and hole traps of ~0.1 eV at 100 K (H1 trap) and ~0.4 eV at 250 K (H2 trap). The open circuit voltage (VOC) deteriorated when the trap densities of E2 were increased. The energy band diagrams of CIGSS were also obtained using Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and DLTS data. These results showed that the valence band was lowered at higher S content. In addition, it was found that the E2 defect influenced the VOC and could be interpreted as an extended defect. Defect depth profile images provided clear insight into the identification of defect state and density as a function of depth around the space charge region.

UR - https://www.scopus.com/pages/publications/85073535622

U2 - 10.1038/srep30554

DO - 10.1038/srep30554

M3 - Article

AN - SCOPUS:85073535622

SN - 2045-2322

VL - 6

JO - Scientific Reports

JF - Scientific Reports

IS - 1

M1 - 30554

ER -

Defect visualization of Cu(InGa)(SeS)₂ thin films using DLTS measurement

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