TY - GEN
T1 - Defect characterization using random telegraph noise in gan-based light-emitting diodes
AU - Park, Jungjin
AU - Kang, Taewook
AU - Woo, Daeyoung
AU - Son, Joong Kon
AU - Shin, Hyungchoel
PY - 2012
Y1 - 2012
N2 - In order to investigate the influence of the traps which exist in the multi-quantum-well (MQW) of GaN-based light-emitting diodes (LEDs), we analyzed the output current fluctuation known as random telegraph noise (RTN) at reverse-biased region. We could find the two-level current fluctuations at two samples (S1, S2) and the low-level average time (τlow) is larger than the high-level average time (τhigh) at both samples, which means that the energy level of the trap is located below the mid-gap of used material. With increasing a reverse bias voltage, in case of S1, τhigh becomes higher and τlow becomes lower as the energy level of the trap becomes relatively higher in reference to quasi Fermi level, EFn. On the contrary, the τhigh becomes lower and the τlow becomes higher at S2 as the energy level of the trap becomes relatively lower in reference to quasi Fermi level, EFp.
AB - In order to investigate the influence of the traps which exist in the multi-quantum-well (MQW) of GaN-based light-emitting diodes (LEDs), we analyzed the output current fluctuation known as random telegraph noise (RTN) at reverse-biased region. We could find the two-level current fluctuations at two samples (S1, S2) and the low-level average time (τlow) is larger than the high-level average time (τhigh) at both samples, which means that the energy level of the trap is located below the mid-gap of used material. With increasing a reverse bias voltage, in case of S1, τhigh becomes higher and τlow becomes lower as the energy level of the trap becomes relatively higher in reference to quasi Fermi level, EFn. On the contrary, the τhigh becomes lower and the τlow becomes higher at S2 as the energy level of the trap becomes relatively lower in reference to quasi Fermi level, EFp.
KW - Fermi-level
KW - Light-emitting diodes
KW - Multi quantum well
KW - Random telegraph noise
KW - Time constant
KW - Tunneling
UR - https://www.scopus.com/pages/publications/80955125777
U2 - 10.4028/www.scientific.net/AMR.378-379.763
DO - 10.4028/www.scientific.net/AMR.378-379.763
M3 - Conference contribution
AN - SCOPUS:80955125777
SN - 9783037852880
T3 - Advanced Materials Research
SP - 763
EP - 766
BT - Applied Materials and Electronics Engineering, AMEE 2012
T2 - 2012 International Conference on Applied Materials and Electronics Engineering, AMEE 2012
Y2 - 18 January 2012 through 19 January 2012
ER -