Abstract
In this letter, we investigate the deembedding accuracy of OPEN-SHORT (OS) and PAD-OPEN-SHORT (POS) deembedding for transistor measurement and modeling. It is found that all of the transistor intrinsic element values except for the gate-resistance, Rgare independent of the deembedding procedure. Furthermore, the difference in Rg is dependent on the device size. To analyze the origin of the deembedding difference, the equivalent circuits of the PADs and interconnection lines are constructed from the measured data by varying the values of parasitic parameters.
| Original language | English |
|---|---|
| Article number | 5290042 |
| Pages (from-to) | 713-715 |
| Number of pages | 3 |
| Journal | IEEE Microwave and Wireless Components Letters |
| Volume | 19 |
| Issue number | 11 |
| DOIs | |
| State | Published - Nov 2009 |
| Externally published | Yes |
Keywords
- Deembedding technique
- Interconnection-line parasitics
- Open-short (OS)
- Pad-open-short (POS)
- R
- RF CMOS
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