Dechlorination and crystallization of solution-processed zinc tin oxide thin film transistor with various annealing temperature

Jeong Soo Lee; Sung Hwan Choi; Seung Hee Kuk; Moon Kyu Song; Yong Hoon Kim; Jang Yeon Kwon; Min Koo Han

Dechlorination and crystallization of solution-processed zinc tin oxide thin film transistor with various annealing temperature

Jeong Soo Lee
, Sung Hwan Choi
, Seung Hee Kuk
, Moon Kyu Song
, Yong Hoon Kim
, Jang Yeon Kwon
, Min Koo Han

Seoul National University
Korea Electronics Technology Institute

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We investigated solution-processed zinc tin oxide (ZTO) thin film transistors (TFTs) with various annehaling temperature. When the annealing temperature increased from 300°C to 500°C, ZTO film was dechlorinated and nano-crystallized, and saturation mobility of solution-processed ZTO thin film transistor increased from 0.18 cm²/V·sec to 2.15 cm ²/V·sec.

Original language	English
Title of host publication	Society for Information Display - 18th International Display Workshops 2011, IDW'11
Pages	1685-1688
Number of pages	4
State	Published - 2011
Externally published	Yes
Event	18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan Duration: 7 Dec 2011 → 9 Dec 2011

Publication series

Name	Proceedings of the International Display Workshops
Volume	3
ISSN (Print)	1883-2490

Conference

Conference	18th International Display Workshops 2011, IDW 2011
Country/Territory	Japan
City	Nagoya
Period	7/12/11 → 9/12/11

Cite this

Lee, J. S., Choi, S. H., Kuk, S. H., Song, M. K., Kim, Y. H., Kwon, J. Y., & Han, M. K. (2011). Dechlorination and crystallization of solution-processed zinc tin oxide thin film transistor with various annealing temperature. In Society for Information Display - 18th International Display Workshops 2011, IDW'11 (pp. 1685-1688). (Proceedings of the International Display Workshops; Vol. 3).

@inproceedings{4472425be947412c80279588778557c4,

title = "Dechlorination and crystallization of solution-processed zinc tin oxide thin film transistor with various annealing temperature",

abstract = "We investigated solution-processed zinc tin oxide (ZTO) thin film transistors (TFTs) with various annehaling temperature. When the annealing temperature increased from 300°C to 500°C, ZTO film was dechlorinated and nano-crystallized, and saturation mobility of solution-processed ZTO thin film transistor increased from 0.18 cm2/V·sec to 2.15 cm 2/V·sec.",

author = "Lee, \{Jeong Soo\} and Choi, \{Sung Hwan\} and Kuk, \{Seung Hee\} and Song, \{Moon Kyu\} and Kim, \{Yong Hoon\} and Kwon, \{Jang Yeon\} and Han, \{Min Koo\}",

year = "2011",

language = "English",

isbn = "9781622761906",

series = "Proceedings of the International Display Workshops",

pages = "1685--1688",

booktitle = "Society for Information Display - 18th International Display Workshops 2011, IDW'11",

note = "18th International Display Workshops 2011, IDW 2011 ; Conference date: 07-12-2011 Through 09-12-2011",

}

Lee, JS, Choi, SH, Kuk, SH, Song, MK, Kim, YH, Kwon, JY & Han, MK 2011, Dechlorination and crystallization of solution-processed zinc tin oxide thin film transistor with various annealing temperature. in Society for Information Display - 18th International Display Workshops 2011, IDW'11. Proceedings of the International Display Workshops, vol. 3, pp. 1685-1688, 18th International Display Workshops 2011, IDW 2011, Nagoya, Japan, 7/12/11.

Dechlorination and crystallization of solution-processed zinc tin oxide thin film transistor with various annealing temperature. / Lee, Jeong Soo; Choi, Sung Hwan; Kuk, Seung Hee et al.
Society for Information Display - 18th International Display Workshops 2011, IDW'11. 2011. p. 1685-1688 (Proceedings of the International Display Workshops; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Dechlorination and crystallization of solution-processed zinc tin oxide thin film transistor with various annealing temperature

AU - Lee, Jeong Soo

AU - Choi, Sung Hwan

AU - Kuk, Seung Hee

AU - Song, Moon Kyu

AU - Kim, Yong Hoon

AU - Kwon, Jang Yeon

AU - Han, Min Koo

PY - 2011

Y1 - 2011

N2 - We investigated solution-processed zinc tin oxide (ZTO) thin film transistors (TFTs) with various annehaling temperature. When the annealing temperature increased from 300°C to 500°C, ZTO film was dechlorinated and nano-crystallized, and saturation mobility of solution-processed ZTO thin film transistor increased from 0.18 cm2/V·sec to 2.15 cm 2/V·sec.

AB - We investigated solution-processed zinc tin oxide (ZTO) thin film transistors (TFTs) with various annehaling temperature. When the annealing temperature increased from 300°C to 500°C, ZTO film was dechlorinated and nano-crystallized, and saturation mobility of solution-processed ZTO thin film transistor increased from 0.18 cm2/V·sec to 2.15 cm 2/V·sec.

UR - https://www.scopus.com/pages/publications/84870672960

M3 - Conference contribution

AN - SCOPUS:84870672960

SN - 9781622761906

T3 - Proceedings of the International Display Workshops

SP - 1685

EP - 1688

BT - Society for Information Display - 18th International Display Workshops 2011, IDW'11

T2 - 18th International Display Workshops 2011, IDW 2011

Y2 - 7 December 2011 through 9 December 2011

ER -

Dechlorination and crystallization of solution-processed zinc tin oxide thin film transistor with various annealing temperature

Abstract

Publication series

Conference

Other files and links

Fingerprint

Cite this