Dead-time optimisation for a phase-shifted dc-dc full bridge converter with GaN HEMT

D. M. Joo; B. K. Lee; J. S. Kim

doi:10.1049/el.2015.3650

Dead-time optimisation for a phase-shifted dc-dc full bridge converter with GaN HEMT

D. M. Joo, B. K. Lee, J. S. Kim

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

An accurate dead-time adjustment method for phase-shifted full bridge (PSFB) converter is presented. This method allows the dead-time of converters to be optimised to meet zero voltage switching condition. The optimum dead-time range can be predicted with high accuracy for any type of power semiconductor switch, including gallium nitride high-electron-mobility transistor, so that a practical design for a PSFB converter can be realised. The validity of the proposed deadtime optimisation method was verified by experimental results with a 600 W prototype.

Original language	English
Pages (from-to)	769-770
Number of pages	2
Journal	Electronics Letters
Volume	52
Issue number	9
DOIs	https://doi.org/10.1049/el.2015.3650
State	Published - 28 Apr 2016
Externally published	Yes

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10.1049/el.2015.3650

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title = "Dead-time optimisation for a phase-shifted dc-dc full bridge converter with GaN HEMT",

abstract = "An accurate dead-time adjustment method for phase-shifted full bridge (PSFB) converter is presented. This method allows the dead-time of converters to be optimised to meet zero voltage switching condition. The optimum dead-time range can be predicted with high accuracy for any type of power semiconductor switch, including gallium nitride high-electron-mobility transistor, so that a practical design for a PSFB converter can be realised. The validity of the proposed deadtime optimisation method was verified by experimental results with a 600 W prototype.",

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AU - Joo, D. M.

AU - Lee, B. K.

AU - Kim, J. S.

N1 - Publisher Copyright: © The Institution of Engineering and Technology 2016.

PY - 2016/4/28

Y1 - 2016/4/28

N2 - An accurate dead-time adjustment method for phase-shifted full bridge (PSFB) converter is presented. This method allows the dead-time of converters to be optimised to meet zero voltage switching condition. The optimum dead-time range can be predicted with high accuracy for any type of power semiconductor switch, including gallium nitride high-electron-mobility transistor, so that a practical design for a PSFB converter can be realised. The validity of the proposed deadtime optimisation method was verified by experimental results with a 600 W prototype.

AB - An accurate dead-time adjustment method for phase-shifted full bridge (PSFB) converter is presented. This method allows the dead-time of converters to be optimised to meet zero voltage switching condition. The optimum dead-time range can be predicted with high accuracy for any type of power semiconductor switch, including gallium nitride high-electron-mobility transistor, so that a practical design for a PSFB converter can be realised. The validity of the proposed deadtime optimisation method was verified by experimental results with a 600 W prototype.

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DO - 10.1049/el.2015.3650

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JF - Electronics Letters

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Dead-time optimisation for a phase-shifted dc-dc full bridge converter with GaN HEMT

Abstract

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