TY - GEN
T1 - DC - 10GHz RF digital to analog converter
AU - Choe, Myung Jun
AU - Lee, Kang Jin
AU - Seo, Munkyo
AU - Teshome, Mesfin
PY - 2011
Y1 - 2011
N2 - In this work we present recent results on high-speed, multi-Nyquist Digital-to-Analog Converter (DAC) capable of RF signal generation well above 10GHz. The DAC is implemented Teledyne's InP double heterojunction bipolar transistor (DHBT) with 0.5im emitter width. The technology offers four level of gold interconnect with BCB dielectric, and thin-film resistor and MIM capacitor are available. Return-to-Zero (RZ) current switches are added to current steering DAC for high frequency wideband applications to achieve higher than 1GHz bandwidth. When clocked at 2.3GHz, the DAC output measures better than 60dB spurious-free dynamic range (SFDR) at 1GHz output frequency. With 2.7GHz data clock and 8.1GHz RZ clock, the measured performance is >50dBc SFDR at 8GHz output frequency. The chip measures 1450 x 2100im including bonding pads and dissipates 1.6 watt power.
AB - In this work we present recent results on high-speed, multi-Nyquist Digital-to-Analog Converter (DAC) capable of RF signal generation well above 10GHz. The DAC is implemented Teledyne's InP double heterojunction bipolar transistor (DHBT) with 0.5im emitter width. The technology offers four level of gold interconnect with BCB dielectric, and thin-film resistor and MIM capacitor are available. Return-to-Zero (RZ) current switches are added to current steering DAC for high frequency wideband applications to achieve higher than 1GHz bandwidth. When clocked at 2.3GHz, the DAC output measures better than 60dB spurious-free dynamic range (SFDR) at 1GHz output frequency. With 2.7GHz data clock and 8.1GHz RZ clock, the measured performance is >50dBc SFDR at 8GHz output frequency. The chip measures 1450 x 2100im including bonding pads and dissipates 1.6 watt power.
KW - Digital to Analog Converters
KW - Direct up-conversion
KW - Heterojunction bipolar transistors
KW - Indium Phosphide
KW - integrated circuits
UR - https://www.scopus.com/pages/publications/81455132365
U2 - 10.1109/CSICS.2011.6062442
DO - 10.1109/CSICS.2011.6062442
M3 - Conference contribution
AN - SCOPUS:81455132365
SN - 9781612847122
T3 - Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
BT - 2011 IEEE Compound Semiconductor Integrated Circuit Symposium
T2 - 2011 33rd IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2011
Y2 - 16 October 2011 through 19 October 2011
ER -