Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier

H. Zang; S. J. Lee; W. Y. Loh; J. Wang; K. T. Chua; Ming Bin Yu; B. J. Cho; G. Q. Lo; D. L. Kwong

doi:10.1109/LED.2007.914095

Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier

H. Zang, S. J. Lee, W. Y. Loh, J. Wang, K. T. Chua, Ming Bin Yu, B. J. Cho, G. Q. Lo, D. L. Kwong

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We demonstrate, for the first time, the application of dopant-segregation (DS) technique in metal-germanium-metal photodetectors for dark-current suppression and high-speed performance. Low defect density and surface smooth epi-Ge (∼300 nm) layer was selectively grown on patterned Si substrate using two-step epi-growth at 400 °C/600 °C combined with a thin (∼10 nm) low-temperature Si/Si_0.8Ge_0.2 buffer layer. NiGe with DS effectively modulates the Schottky barrier height and suppresses dark current to ∼^-7 A at -1 V bias (width/spacing: 30/2.5 μm). Under normal incidence illumination at 1.55 μm, the devices show photoresponsivity of 0.12 A/W. The 3 dB bandwidth under -1 V bias is up to 6 GHz.

Original language	English
Pages (from-to)	161-164
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	29
Issue number	2
DOIs	https://doi.org/10.1109/LED.2007.914095
State	Published - Feb 2008
Externally published	Yes

Keywords

Dark current
Dopant segregation (DS)
Germanium
Optical communications
Photodetectors
Selective epitaxial

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10.1109/LED.2007.914095

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title = "Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier",

abstract = "We demonstrate, for the first time, the application of dopant-segregation (DS) technique in metal-germanium-metal photodetectors for dark-current suppression and high-speed performance. Low defect density and surface smooth epi-Ge (∼300 nm) layer was selectively grown on patterned Si substrate using two-step epi-growth at 400 °C/600 °C combined with a thin (∼10 nm) low-temperature Si/Si0.8Ge0.2 buffer layer. NiGe with DS effectively modulates the Schottky barrier height and suppresses dark current to ∼-7 A at -1 V bias (width/spacing: 30/2.5 μm). Under normal incidence illumination at 1.55 μm, the devices show photoresponsivity of 0.12 A/W. The 3 dB bandwidth under -1 V bias is up to 6 GHz.",

keywords = "Dark current, Dopant segregation (DS), Germanium, Optical communications, Photodetectors, Selective epitaxial",

author = "H. Zang and Lee, \{S. J.\} and Loh, \{W. Y.\} and J. Wang and Chua, \{K. T.\} and Yu, \{Ming Bin\} and Cho, \{B. J.\} and Lo, \{G. Q.\} and Kwong, \{D. L.\}",

year = "2008",

month = feb,

doi = "10.1109/LED.2007.914095",

language = "English",

volume = "29",

pages = "161--164",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier

AU - Zang, H.

AU - Lee, S. J.

AU - Loh, W. Y.

AU - Wang, J.

AU - Chua, K. T.

AU - Yu, Ming Bin

AU - Cho, B. J.

AU - Lo, G. Q.

AU - Kwong, D. L.

PY - 2008/2

Y1 - 2008/2

N2 - We demonstrate, for the first time, the application of dopant-segregation (DS) technique in metal-germanium-metal photodetectors for dark-current suppression and high-speed performance. Low defect density and surface smooth epi-Ge (∼300 nm) layer was selectively grown on patterned Si substrate using two-step epi-growth at 400 °C/600 °C combined with a thin (∼10 nm) low-temperature Si/Si0.8Ge0.2 buffer layer. NiGe with DS effectively modulates the Schottky barrier height and suppresses dark current to ∼-7 A at -1 V bias (width/spacing: 30/2.5 μm). Under normal incidence illumination at 1.55 μm, the devices show photoresponsivity of 0.12 A/W. The 3 dB bandwidth under -1 V bias is up to 6 GHz.

AB - We demonstrate, for the first time, the application of dopant-segregation (DS) technique in metal-germanium-metal photodetectors for dark-current suppression and high-speed performance. Low defect density and surface smooth epi-Ge (∼300 nm) layer was selectively grown on patterned Si substrate using two-step epi-growth at 400 °C/600 °C combined with a thin (∼10 nm) low-temperature Si/Si0.8Ge0.2 buffer layer. NiGe with DS effectively modulates the Schottky barrier height and suppresses dark current to ∼-7 A at -1 V bias (width/spacing: 30/2.5 μm). Under normal incidence illumination at 1.55 μm, the devices show photoresponsivity of 0.12 A/W. The 3 dB bandwidth under -1 V bias is up to 6 GHz.

KW - Dark current

KW - Dopant segregation (DS)

KW - Germanium

KW - Optical communications

KW - Photodetectors

KW - Selective epitaxial

UR - https://www.scopus.com/pages/publications/39549113172

U2 - 10.1109/LED.2007.914095

DO - 10.1109/LED.2007.914095

M3 - Article

AN - SCOPUS:39549113172

SN - 0741-3106

VL - 29

SP - 161

EP - 164

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier

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Keywords

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