Damage during SiO2 etching by low-angle forward reflected neutral beam

Dohaing Lee; Minjae Chung; Sangduk Park; Geunyoung Yeom

doi:10.1143/jjap.41.l1412

Damage during SiO₂ etching by low-angle forward reflected neutral beam

Dohaing Lee, Minjae Chung, Sangduk Park, Geunyoung Yeom

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Letter › peer-review

13 Scopus citations

Abstract

In this study, energetic reactive radical beams were formed with SF₆ using a low-angle forward reflected neutral beam technique and the etch properties of SiO₂ and possible damage induced by the radical beam were investigated. The results showed that when SiO₂ was etched with the energetic reactive radical beams generated with SF₆, SiO₂ etch rates higher than 22 nm/min could be obtained. Also, when the etch damage was studied in terms of the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of metal-nitride-oxide-silicon (MNOS) and metal-oxide-silicon (MOS) devices exposed to the radical beams, nearly no etch damage could be found.

Original language	English
Pages (from-to)	L1412-L1415
Journal	Japanese Journal of Applied Physics
Volume	41
Issue number	12 A
DOIs	https://doi.org/10.1143/jjap.41.l1412
State	Published - 1 Dec 2002

Keywords

Etching
Low damage
Low-angle reflection
Neutral beam
SiO

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title = "Damage during SiO2 etching by low-angle forward reflected neutral beam",

abstract = "In this study, energetic reactive radical beams were formed with SF6 using a low-angle forward reflected neutral beam technique and the etch properties of SiO2 and possible damage induced by the radical beam were investigated. The results showed that when SiO2 was etched with the energetic reactive radical beams generated with SF6, SiO2 etch rates higher than 22 nm/min could be obtained. Also, when the etch damage was studied in terms of the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of metal-nitride-oxide-silicon (MNOS) and metal-oxide-silicon (MOS) devices exposed to the radical beams, nearly no etch damage could be found.",

keywords = "Etching, Low damage, Low-angle reflection, Neutral beam, SiO",

author = "Dohaing Lee and Minjae Chung and Sangduk Park and Geunyoung Yeom",

year = "2002",

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doi = "10.1143/jjap.41.l1412",

language = "English",

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pages = "L1412--L1415",

journal = "Japanese Journal of Applied Physics",

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TY - JOUR

T1 - Damage during SiO2 etching by low-angle forward reflected neutral beam

AU - Lee, Dohaing

AU - Chung, Minjae

AU - Park, Sangduk

AU - Yeom, Geunyoung

PY - 2002/12/1

Y1 - 2002/12/1

N2 - In this study, energetic reactive radical beams were formed with SF6 using a low-angle forward reflected neutral beam technique and the etch properties of SiO2 and possible damage induced by the radical beam were investigated. The results showed that when SiO2 was etched with the energetic reactive radical beams generated with SF6, SiO2 etch rates higher than 22 nm/min could be obtained. Also, when the etch damage was studied in terms of the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of metal-nitride-oxide-silicon (MNOS) and metal-oxide-silicon (MOS) devices exposed to the radical beams, nearly no etch damage could be found.

AB - In this study, energetic reactive radical beams were formed with SF6 using a low-angle forward reflected neutral beam technique and the etch properties of SiO2 and possible damage induced by the radical beam were investigated. The results showed that when SiO2 was etched with the energetic reactive radical beams generated with SF6, SiO2 etch rates higher than 22 nm/min could be obtained. Also, when the etch damage was studied in terms of the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of metal-nitride-oxide-silicon (MNOS) and metal-oxide-silicon (MOS) devices exposed to the radical beams, nearly no etch damage could be found.

KW - Etching

KW - Low damage

KW - Low-angle reflection

KW - Neutral beam

KW - SiO

UR - https://www.scopus.com/pages/publications/0036973855

U2 - 10.1143/jjap.41.l1412

DO - 10.1143/jjap.41.l1412

M3 - Letter

AN - SCOPUS:0036973855

SN - 0021-4922

VL - 41

SP - L1412-L1415

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12 A

ER -

Damage during SiO₂ etching by low-angle forward reflected neutral beam

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Keywords

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