Current-voltage characteristics of vertical diodes for next generation memories

Hokyun An; Kong Soo Lee; Yoongoo Kang; Seonghoon Jeong; Wonseok Yoo; Jae Jong Han; Bonghyun Kim; Hanjin Lim; Seokwoo Nam; Gi Tae Jeong; Ho Kyu Kang; Chilhee Chung; Byoungdeog Choi

doi:10.1109/ESSDERC.2012.6343355

Current-voltage characteristics of vertical diodes for next generation memories

Hokyun An, Kong Soo Lee, Yoongoo Kang, Seonghoon Jeong, Wonseok Yoo, Jae Jong Han, Bonghyun Kim, Hanjin Lim, Seokwoo Nam, Gi Tae Jeong, Ho Kyu Kang, Chilhee Chung, Byoungdeog Choi

Department of Electronic and Electrical Engineering

Samsung

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

In this paper, current-voltage-temperature (I-V-T) characteristics of vertical diodes realized by different selective epitaxial growth techniques have been investigated. Diodes by the batch-type cyclic SEG process at low temperature have shown eligible performances for vertical switches, including ideality factor of 1.08, off-current of 1.0×10¹² A and on/off-ratio of 2.4×10⁸. The optimization of crystallographic defects and series resistance is expected to be the most critical for the performances of vertical diodes for next generation memories.

Original language	English
Title of host publication	2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
Pages	149-152
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDERC.2012.6343355
State	Published - 2012
Event	42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France Duration: 17 Sep 2012 → 21 Sep 2012

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	42nd European Solid-State Device Research Conference, ESSDERC 2012
Country/Territory	France
City	Bordeaux
Period	17/09/12 → 21/09/12

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10.1109/ESSDERC.2012.6343355

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An, H., Lee, K. S., Kang, Y., Jeong, S., Yoo, W., Han, J. J., Kim, B., Lim, H., Nam, S., Jeong, G. T., Kang, H. K., Chung, C., & Choi, B. (2012). Current-voltage characteristics of vertical diodes for next generation memories. In 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012 (pp. 149-152). Article 6343355 (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2012.6343355

@inproceedings{3e1a44483fbd4096861475ba179886f4,

title = "Current-voltage characteristics of vertical diodes for next generation memories",

abstract = "In this paper, current-voltage-temperature (I-V-T) characteristics of vertical diodes realized by different selective epitaxial growth techniques have been investigated. Diodes by the batch-type cyclic SEG process at low temperature have shown eligible performances for vertical switches, including ideality factor of 1.08, off-current of 1.0×1012 A and on/off-ratio of 2.4×108. The optimization of crystallographic defects and series resistance is expected to be the most critical for the performances of vertical diodes for next generation memories.",

author = "Hokyun An and Lee, \{Kong Soo\} and Yoongoo Kang and Seonghoon Jeong and Wonseok Yoo and Han, \{Jae Jong\} and Bonghyun Kim and Hanjin Lim and Seokwoo Nam and Jeong, \{Gi Tae\} and Kang, \{Ho Kyu\} and Chilhee Chung and Byoungdeog Choi",

year = "2012",

doi = "10.1109/ESSDERC.2012.6343355",

language = "English",

isbn = "9781467317078",

series = "European Solid-State Device Research Conference",

pages = "149--152",

booktitle = "2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012",

note = "42nd European Solid-State Device Research Conference, ESSDERC 2012 ; Conference date: 17-09-2012 Through 21-09-2012",

}

An, H, Lee, KS, Kang, Y, Jeong, S, Yoo, W, Han, JJ, Kim, B, Lim, H, Nam, S, Jeong, GT, Kang, HK, Chung, C & Choi, B 2012, Current-voltage characteristics of vertical diodes for next generation memories. in 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012., 6343355, European Solid-State Device Research Conference, pp. 149-152, 42nd European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, 17/09/12. https://doi.org/10.1109/ESSDERC.2012.6343355

Current-voltage characteristics of vertical diodes for next generation memories. / An, Hokyun; Lee, Kong Soo; Kang, Yoongoo et al.
2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012. 2012. p. 149-152 6343355 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Current-voltage characteristics of vertical diodes for next generation memories

AU - An, Hokyun

AU - Lee, Kong Soo

AU - Kang, Yoongoo

AU - Jeong, Seonghoon

AU - Yoo, Wonseok

AU - Han, Jae Jong

AU - Kim, Bonghyun

AU - Lim, Hanjin

AU - Nam, Seokwoo

AU - Jeong, Gi Tae

AU - Kang, Ho Kyu

AU - Chung, Chilhee

AU - Choi, Byoungdeog

PY - 2012

Y1 - 2012

N2 - In this paper, current-voltage-temperature (I-V-T) characteristics of vertical diodes realized by different selective epitaxial growth techniques have been investigated. Diodes by the batch-type cyclic SEG process at low temperature have shown eligible performances for vertical switches, including ideality factor of 1.08, off-current of 1.0×1012 A and on/off-ratio of 2.4×108. The optimization of crystallographic defects and series resistance is expected to be the most critical for the performances of vertical diodes for next generation memories.

AB - In this paper, current-voltage-temperature (I-V-T) characteristics of vertical diodes realized by different selective epitaxial growth techniques have been investigated. Diodes by the batch-type cyclic SEG process at low temperature have shown eligible performances for vertical switches, including ideality factor of 1.08, off-current of 1.0×1012 A and on/off-ratio of 2.4×108. The optimization of crystallographic defects and series resistance is expected to be the most critical for the performances of vertical diodes for next generation memories.

UR - https://www.scopus.com/pages/publications/84870581457

U2 - 10.1109/ESSDERC.2012.6343355

DO - 10.1109/ESSDERC.2012.6343355

M3 - Conference contribution

AN - SCOPUS:84870581457

SN - 9781467317078

T3 - European Solid-State Device Research Conference

SP - 149

EP - 152

BT - 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012

T2 - 42nd European Solid-State Device Research Conference, ESSDERC 2012

Y2 - 17 September 2012 through 21 September 2012

ER -

Current-voltage characteristics of vertical diodes for next generation memories

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