CsN3 as an air stable and low temperature evaporable novel n doping material for high efficiency and low driving voltage in organic light-emitting diodes

Jun Yeob Lee; Kyoung Soo Yook; Soon Ok Jeon; Chul Woong Joo; Tae Woo Lee; Taeyong Noh; Haa Jin Yang; Sung Kee Kang

CsN₃ as an air stable and low temperature evaporable novel n doping material for high efficiency and low driving voltage in organic light-emitting diodes

Jun Yeob Lee, Kyoung Soo Yook, Soon Ok Jeon, Chul Woong Joo, Tae Woo Lee, Taeyong Noh, Haa Jin Yang, Sung Kee Kang

Research output: Contribution to journal › Conference article › peer-review

Abstract

CsN₃was developed as a novel n doping material with air stability and low deposition temperature. Evaporation temperature of CsN ₃ was similar to that of common hole injection material and it worked well as a n dopant in electron transport layer. Driving voltage was lowered and high power efficiency was obtained in green phosphorescent devices by using CsN₃ as a dopant in electron transport layer. It could also be used as a charge generation layer in combination with MoO₃. In addition, n doping mechanism study revealed that CsN₃ is decomposed into Cs and N₂ during evaporation. This is the first work reporting air stable and low temperature evaporable n dopant in organic light-emitting diodes.

Original language	English
Pages (from-to)	1319-1322
Number of pages	4
Journal	Proceedings of International Meeting on Information Display
Volume	8
State	Published - 2008
Externally published	Yes
Event	8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008 - Ilsan, Korea, Republic of Duration: 13 Oct 2008 → 17 Oct 2008

Cite this

@article{d12d9a2689ed4e8187e9c07f08087a9e,

title = "CsN3 as an air stable and low temperature evaporable novel n doping material for high efficiency and low driving voltage in organic light-emitting diodes",

abstract = "CsN3was developed as a novel n doping material with air stability and low deposition temperature. Evaporation temperature of CsN 3 was similar to that of common hole injection material and it worked well as a n dopant in electron transport layer. Driving voltage was lowered and high power efficiency was obtained in green phosphorescent devices by using CsN3 as a dopant in electron transport layer. It could also be used as a charge generation layer in combination with MoO3. In addition, n doping mechanism study revealed that CsN3 is decomposed into Cs and N2 during evaporation. This is the first work reporting air stable and low temperature evaporable n dopant in organic light-emitting diodes.",

author = "Lee, \{Jun Yeob\} and Yook, \{Kyoung Soo\} and Jeon, \{Soon Ok\} and Joo, \{Chul Woong\} and Lee, \{Tae Woo\} and Taeyong Noh and Yang, \{Haa Jin\} and Kang, \{Sung Kee\}",

year = "2008",

language = "English",

volume = "8",

pages = "1319--1322",

journal = "Proceedings of International Meeting on Information Display",

issn = "1738-7558",

note = "8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008 ; Conference date: 13-10-2008 Through 17-10-2008",

}

CsN₃ as an air stable and low temperature evaporable novel n doping material for high efficiency and low driving voltage in organic light-emitting diodes. / Lee, Jun Yeob; Yook, Kyoung Soo; Jeon, Soon Ok et al.
In: Proceedings of International Meeting on Information Display, Vol. 8, 2008, p. 1319-1322.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - CsN3 as an air stable and low temperature evaporable novel n doping material for high efficiency and low driving voltage in organic light-emitting diodes

AU - Lee, Jun Yeob

AU - Yook, Kyoung Soo

AU - Jeon, Soon Ok

AU - Joo, Chul Woong

AU - Lee, Tae Woo

AU - Noh, Taeyong

AU - Yang, Haa Jin

AU - Kang, Sung Kee

PY - 2008

Y1 - 2008

N2 - CsN3was developed as a novel n doping material with air stability and low deposition temperature. Evaporation temperature of CsN 3 was similar to that of common hole injection material and it worked well as a n dopant in electron transport layer. Driving voltage was lowered and high power efficiency was obtained in green phosphorescent devices by using CsN3 as a dopant in electron transport layer. It could also be used as a charge generation layer in combination with MoO3. In addition, n doping mechanism study revealed that CsN3 is decomposed into Cs and N2 during evaporation. This is the first work reporting air stable and low temperature evaporable n dopant in organic light-emitting diodes.

AB - CsN3was developed as a novel n doping material with air stability and low deposition temperature. Evaporation temperature of CsN 3 was similar to that of common hole injection material and it worked well as a n dopant in electron transport layer. Driving voltage was lowered and high power efficiency was obtained in green phosphorescent devices by using CsN3 as a dopant in electron transport layer. It could also be used as a charge generation layer in combination with MoO3. In addition, n doping mechanism study revealed that CsN3 is decomposed into Cs and N2 during evaporation. This is the first work reporting air stable and low temperature evaporable n dopant in organic light-emitting diodes.

UR - https://www.scopus.com/pages/publications/65649145726

M3 - Conference article

AN - SCOPUS:65649145726

SN - 1738-7558

VL - 8

SP - 1319

EP - 1322

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

T2 - 8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008

Y2 - 13 October 2008 through 17 October 2008

ER -

CsN₃ as an air stable and low temperature evaporable novel n doping material for high efficiency and low driving voltage in organic light-emitting diodes

Abstract

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