Corrigendum to “Ultrathin monolithic HfO2 formed by Hf-seeded atomic layer deposition on MoS2: Film characteristics and its transistor application” [Thin Solid Films 673 (2019) 112-118] (Thin Solid Films (2019) 673(112-118) (S0040609019300458), (10.1016/j.tsf.2019.01.039))

  • Hoijoon Kim
  • , Taejin Park
  • , Seongjae Park
  • , Mirine Leem
  • , Wonsik Ahn
  • , Hyangsook Lee
  • , Changmin Lee
  • , Eunha Lee
  • , Seong Jun Jeong
  • , Seongjun Park
  • , Yunseok Kim
  • , Hyoungsub Kim

Research output: Contribution to journal › Comment/debate

Fingerprint

Dive into the research topics of 'Corrigendum to “Ultrathin monolithic HfO2 formed by Hf-seeded atomic layer deposition on MoS2: Film characteristics and its transistor application” [Thin Solid Films 673 (2019) 112-118] (Thin Solid Films (2019) 673(112-118) (S0040609019300458), (10.1016/j.tsf.2019.01.039))'. Together they form a unique fingerprint.
Sort by

Engineering

Earth and Planetary Sciences

Agricultural and Biological Sciences

Material Science