Corrigendum to “Ultrathin monolithic HfO₂ formed by Hf-seeded atomic layer deposition on MoS₂: Film characteristics and its transistor application” [Thin Solid Films 673 (2019) 112-118] (Thin Solid Films (2019) 673(112-118) (S0040609019300458), (10.1016/j.tsf.2019.01.039))

The authors regret that during the publication of this paper unfortunate mistake has occurred within Fig. 5 and its discussion. Three spectra in Fig. 5 were shifted in an x-axis direction during the calibration process. In addition, the notations for the substrate contribution (O−Si) to the O 1s spectra were missing in Fig. 5(b). The corrected discussion and figure were reproduced below. The authors would like to apologize for any inconvenience caused. Page 114, right column, line 23, should read as “As shown in Fig. 5(a), the bare MoS₂ flake exhibited the characteristic Mo 3d and S 2p peaks originating from the Mo−S bonds; the measured binding energies of Mo 3d_3/2, Mo 3d_5/2, S 2p_1/2, and S 2p_3/2 were 232.8, 229.6, 163.4, and 162.2 eV, respectively, which well matched with the reported values [17].”