Corrigendum to “Tunnel oxide thickness-dependent dominant carrier transport in crystalline silicon solar cells” [Opt. Mater. 154 (2024) 115711] (Optical Materials (2024) 154, (S0925346724008942), (10.1016/j.optmat.2024.115711))

Mengmeng Chu; Muhammad Quddamah Khokhar; Seungyong Han; Fucheng Wang; Minh Phuong Nguyen; Vinh Ai Dao; Duy Phong Pham; Junsin Yi

doi:10.1016/j.optmat.2024.116228

Corrigendum to “Tunnel oxide thickness-dependent dominant carrier transport in crystalline silicon solar cells” [Opt. Mater. 154 (2024) 115711] (Optical Materials (2024) 154, (S0925346724008942), (10.1016/j.optmat.2024.115711))

Mengmeng Chu, Muhammad Quddamah Khokhar, Seungyong Han, Fucheng Wang, Minh Phuong Nguyen, Vinh Ai Dao, Duy Phong Pham, Junsin Yi

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Comment/debate

Abstract

The authors regret that the affiliation (d) of the author, Vinh-Ai Dao, was obscure in the published version. The affiliation (d) should be revised as follows: ^d Department of Physics, Faculty of Applied Sciences, HCMC University of Technology and Education, Ho Chi Minh City 700000, Vietnam. The authors would like to apologise for any inconvenience caused.

Original language	English
Article number	116228
Journal	Optical Materials
Volume	157
DOIs	https://doi.org/10.1016/j.optmat.2024.116228
State	Published - Nov 2024

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Chu, M., Khokhar, M. Q., Han, S., Wang, F., Nguyen, M. P., Dao, V. A., Pham, D. P., & Yi, J. (2024). Corrigendum to “Tunnel oxide thickness-dependent dominant carrier transport in crystalline silicon solar cells” [Opt. Mater. 154 (2024) 115711] (Optical Materials (2024) 154, (S0925346724008942), (10.1016/j.optmat.2024.115711)). Optical Materials, 157, Article 116228. https://doi.org/10.1016/j.optmat.2024.116228

@article{a7b7cbf096d44d02abcdf0970f492621,

title = "Corrigendum to “Tunnel oxide thickness-dependent dominant carrier transport in crystalline silicon solar cells” [Opt. Mater. 154 (2024) 115711] (Optical Materials (2024) 154, (S0925346724008942), (10.1016/j.optmat.2024.115711))",

abstract = "The authors regret that the affiliation (d) of the author, Vinh-Ai Dao, was obscure in the published version. The affiliation (d) should be revised as follows: d Department of Physics, Faculty of Applied Sciences, HCMC University of Technology and Education, Ho Chi Minh City 700000, Vietnam. The authors would like to apologise for any inconvenience caused.",

author = "Mengmeng Chu and Khokhar, \{Muhammad Quddamah\} and Seungyong Han and Fucheng Wang and Nguyen, \{Minh Phuong\} and Dao, \{Vinh Ai\} and Pham, \{Duy Phong\} and Junsin Yi",

note = "Publisher Copyright: {\textcopyright} 2024 Elsevier B.V.",

year = "2024",

month = nov,

doi = "10.1016/j.optmat.2024.116228",

language = "English",

volume = "157",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier B.V.",

}

Chu, M, Khokhar, MQ, Han, S, Wang, F, Nguyen, MP, Dao, VA, Pham, DP & Yi, J 2024, 'Corrigendum to “Tunnel oxide thickness-dependent dominant carrier transport in crystalline silicon solar cells” [Opt. Mater. 154 (2024) 115711] (Optical Materials (2024) 154, (S0925346724008942), (10.1016/j.optmat.2024.115711))', Optical Materials, vol. 157, 116228. https://doi.org/10.1016/j.optmat.2024.116228

Corrigendum to “Tunnel oxide thickness-dependent dominant carrier transport in crystalline silicon solar cells” [Opt. Mater. 154 (2024) 115711] (Optical Materials (2024) 154, (S0925346724008942), (10.1016/j.optmat.2024.115711)). / Chu, Mengmeng; Khokhar, Muhammad Quddamah; Han, Seungyong et al.
In: Optical Materials, Vol. 157, 116228, 11.2024.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Corrigendum to “Tunnel oxide thickness-dependent dominant carrier transport in crystalline silicon solar cells” [Opt. Mater. 154 (2024) 115711] (Optical Materials (2024) 154, (S0925346724008942), (10.1016/j.optmat.2024.115711))

AU - Chu, Mengmeng

AU - Khokhar, Muhammad Quddamah

AU - Han, Seungyong

AU - Wang, Fucheng

AU - Nguyen, Minh Phuong

AU - Dao, Vinh Ai

AU - Pham, Duy Phong

AU - Yi, Junsin

PY - 2024/11

Y1 - 2024/11

N2 - The authors regret that the affiliation (d) of the author, Vinh-Ai Dao, was obscure in the published version. The affiliation (d) should be revised as follows: d Department of Physics, Faculty of Applied Sciences, HCMC University of Technology and Education, Ho Chi Minh City 700000, Vietnam. The authors would like to apologise for any inconvenience caused.

AB - The authors regret that the affiliation (d) of the author, Vinh-Ai Dao, was obscure in the published version. The affiliation (d) should be revised as follows: d Department of Physics, Faculty of Applied Sciences, HCMC University of Technology and Education, Ho Chi Minh City 700000, Vietnam. The authors would like to apologise for any inconvenience caused.

UR - https://www.scopus.com/pages/publications/85205672875

U2 - 10.1016/j.optmat.2024.116228

DO - 10.1016/j.optmat.2024.116228

M3 - Comment/debate

AN - SCOPUS:85205672875

SN - 0925-3467

VL - 157

JO - Optical Materials

JF - Optical Materials

M1 - 116228

ER -

Corrigendum to “Tunnel oxide thickness-dependent dominant carrier transport in crystalline silicon solar cells” [Opt. Mater. 154 (2024) 115711] (Optical Materials (2024) 154, (S0925346724008942), (10.1016/j.optmat.2024.115711))

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