Abstract
Gallium nitride (GaN) hollow nanostructures were successfully produced from carbon@Ga(OH)CO3 core-shell nanostructrures under calcination in air atmosphere and nitridation using ammonia gas. The pure carbon and core-shell nanostructures have a uniform spherical shape with a diameter of about 150~200 nm and a shell thickness of about 20 nm. The highly crystalline β-Ga2O3 hollow nanostructures with diameters of approximately 200 nm were obtained. The effects of transformation from β-Ga2O3 to GaN hollow nanostructures as a function of nitridation temperatures and NH3 flow rates were characterized using scanning electron microscopy. Uniform GaN hollow nanostructures were obtained under a flowing NH3 (100 sccm) atmosphere at 800 °C for 1 hour. Two prominent IR absorption bands at 584 cm-1 and 615 cm-1 were attributed to the formation of GaOxNy and GaN intermediates. The broad symmetric four peaks at 224, 415, 571 E2(high), and 723 A1(LO) cm-1 correspond to the Raman selection rules for wurtzite GaN.
| Original language | English |
|---|---|
| Pages (from-to) | 1480-1484 |
| Number of pages | 5 |
| Journal | Science of Advanced Materials |
| Volume | 7 |
| Issue number | 8 |
| DOIs | |
| State | Published - 2015 |
Keywords
- FTIR
- Hollow structures
- Raman
- Semiconductors