Controlled transformation and characteristics of GaN hollow nanostructures via Carbon@Ga(OH)CO3 by hydrothermal method

Bong Kyun Kang, Sung Ryul Mang, Hyeong Dae Lim, Keun Man Song, Mong Kwon Jung, Dae Ho Yoon

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1 Scopus citations

Abstract

Gallium nitride (GaN) hollow nanostructures were successfully produced from carbon@Ga(OH)CO3 core-shell nanostructrures under calcination in air atmosphere and nitridation using ammonia gas. The pure carbon and core-shell nanostructures have a uniform spherical shape with a diameter of about 150~200 nm and a shell thickness of about 20 nm. The highly crystalline β-Ga2O3 hollow nanostructures with diameters of approximately 200 nm were obtained. The effects of transformation from β-Ga2O3 to GaN hollow nanostructures as a function of nitridation temperatures and NH3 flow rates were characterized using scanning electron microscopy. Uniform GaN hollow nanostructures were obtained under a flowing NH3 (100 sccm) atmosphere at 800 °C for 1 hour. Two prominent IR absorption bands at 584 cm-1 and 615 cm-1 were attributed to the formation of GaOxNy and GaN intermediates. The broad symmetric four peaks at 224, 415, 571 E2(high), and 723 A1(LO) cm-1 correspond to the Raman selection rules for wurtzite GaN.

Original languageEnglish
Pages (from-to)1480-1484
Number of pages5
JournalScience of Advanced Materials
Volume7
Issue number8
DOIs
StatePublished - 2015

Keywords

  • FTIR
  • Hollow structures
  • Raman
  • Semiconductors

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