Controlled Synthesis of Horizontal Silicon Nanowires for Biosensor Application

Chisung Ahn; Jihun Mun; Atul Kulkarni; Yinhua Jin; Giwoon Sung; Minho Lee; Taesung Kim; Kwangsu Kim

doi:10.1142/S1793292015501076

Controlled Synthesis of Horizontal Silicon Nanowires for Biosensor Application

Chisung Ahn, Jihun Mun, Atul Kulkarni, Yinhua Jin, Giwoon Sung, Minho Lee, Taesung Kim, Kwangsu Kim

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Top-down silicon nanowire (SiNW) fabrication mechanisms for connecting electrodes are widely utilized because they provide good control of the diameter to length ratio. The representative mechanism for the synthesis of SiNWs, a top-down approach, has limitations on the control of their diameter following lithography technologies, requires a long manufacturing process and is not cost-effective. In this study, we have implemented the bottom-up growth of horizontal SiNWs(H-SiNWs) on Si/SiO2 substrates directly by plasma enhanced chemical vapor deposition (PECVD) under about 400°C. The HAuCl4 solution as a catalyst and SiH4 gas as a precursor are used for the synthesis of H-SiNWs. After optimization of synthesis conditions, we evaluated the photoelectric properties of the H-SiNWs under illumination with different light intensities. Further, we demonstrated the feasibility of H-SiNW devices for the detection of biotinylated DNA nanostructures and streptavidin interaction.

Original language	English
Article number	1550107
Journal	Nano
Volume	10
Issue number	7
DOIs	https://doi.org/10.1142/S1793292015501076
State	Published - 1 Oct 2015

Keywords

biosensor
Horizontal growth
photocurrent
plasma enhanced chemical vapor deposition
silicon nanowire

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1142/S1793292015501076

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title = "Controlled Synthesis of Horizontal Silicon Nanowires for Biosensor Application",

abstract = "Top-down silicon nanowire (SiNW) fabrication mechanisms for connecting electrodes are widely utilized because they provide good control of the diameter to length ratio. The representative mechanism for the synthesis of SiNWs, a top-down approach, has limitations on the control of their diameter following lithography technologies, requires a long manufacturing process and is not cost-effective. In this study, we have implemented the bottom-up growth of horizontal SiNWs(H-SiNWs) on Si/SiO2 substrates directly by plasma enhanced chemical vapor deposition (PECVD) under about 400°C. The HAuCl4 solution as a catalyst and SiH4 gas as a precursor are used for the synthesis of H-SiNWs. After optimization of synthesis conditions, we evaluated the photoelectric properties of the H-SiNWs under illumination with different light intensities. Further, we demonstrated the feasibility of H-SiNW devices for the detection of biotinylated DNA nanostructures and streptavidin interaction.",

keywords = "biosensor, Horizontal growth, photocurrent, plasma enhanced chemical vapor deposition, silicon nanowire",

author = "Chisung Ahn and Jihun Mun and Atul Kulkarni and Yinhua Jin and Giwoon Sung and Minho Lee and Taesung Kim and Kwangsu Kim",

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doi = "10.1142/S1793292015501076",

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T1 - Controlled Synthesis of Horizontal Silicon Nanowires for Biosensor Application

AU - Ahn, Chisung

AU - Mun, Jihun

AU - Kulkarni, Atul

AU - Jin, Yinhua

AU - Sung, Giwoon

AU - Lee, Minho

AU - Kim, Taesung

AU - Kim, Kwangsu

PY - 2015/10/1

Y1 - 2015/10/1

N2 - Top-down silicon nanowire (SiNW) fabrication mechanisms for connecting electrodes are widely utilized because they provide good control of the diameter to length ratio. The representative mechanism for the synthesis of SiNWs, a top-down approach, has limitations on the control of their diameter following lithography technologies, requires a long manufacturing process and is not cost-effective. In this study, we have implemented the bottom-up growth of horizontal SiNWs(H-SiNWs) on Si/SiO2 substrates directly by plasma enhanced chemical vapor deposition (PECVD) under about 400°C. The HAuCl4 solution as a catalyst and SiH4 gas as a precursor are used for the synthesis of H-SiNWs. After optimization of synthesis conditions, we evaluated the photoelectric properties of the H-SiNWs under illumination with different light intensities. Further, we demonstrated the feasibility of H-SiNW devices for the detection of biotinylated DNA nanostructures and streptavidin interaction.

AB - Top-down silicon nanowire (SiNW) fabrication mechanisms for connecting electrodes are widely utilized because they provide good control of the diameter to length ratio. The representative mechanism for the synthesis of SiNWs, a top-down approach, has limitations on the control of their diameter following lithography technologies, requires a long manufacturing process and is not cost-effective. In this study, we have implemented the bottom-up growth of horizontal SiNWs(H-SiNWs) on Si/SiO2 substrates directly by plasma enhanced chemical vapor deposition (PECVD) under about 400°C. The HAuCl4 solution as a catalyst and SiH4 gas as a precursor are used for the synthesis of H-SiNWs. After optimization of synthesis conditions, we evaluated the photoelectric properties of the H-SiNWs under illumination with different light intensities. Further, we demonstrated the feasibility of H-SiNW devices for the detection of biotinylated DNA nanostructures and streptavidin interaction.

KW - biosensor

KW - Horizontal growth

KW - photocurrent

KW - plasma enhanced chemical vapor deposition

KW - silicon nanowire

UR - https://www.scopus.com/pages/publications/84945457472

U2 - 10.1142/S1793292015501076

DO - 10.1142/S1793292015501076

M3 - Article

AN - SCOPUS:84945457472

SN - 1793-2920

VL - 10

JO - Nano

JF - Nano

IS - 7

M1 - 1550107

ER -

Controlled Synthesis of Horizontal Silicon Nanowires for Biosensor Application

Abstract

Keywords

UN SDGs

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