Control of the interfacial reaction in HfO                         2                          on Si-passivated GaAs

Sang Han Park; Yu Seon Kang; Jimin Chae; Hyo Jin Kim; Mann Ho Cho; Dae Hong Ko; Young Chul Byun; Hyoungsub Kim; Sang Wan Cho; Chung Yi Kim; Jung Hye Seo

doi:10.1016/j.apsusc.2013.06.118

Control of the interfacial reaction in HfO ₂ on Si-passivated GaAs

Sang Han Park, Yu Seon Kang, Jimin Chae, Hyo Jin Kim, Mann Ho Cho, Dae Hong Ko, Young Chul Byun, Hyoungsub Kim, Sang Wan Cho, Chung Yi Kim, Jung Hye Seo

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The physical and electrical effects caused by interfacial reactions of HfO ₂ on Si-passivated GaAs were investigated by various methods. The results showed that the Si layer decreases the diffusion and formation of GaO. Moreover, post-nitridation in HfO ₂ /Si/GaAs significantly reduced the formation of AsO and GaO. The depth profiling data showed that two separated layered structures were formed with HfO ₂ and a mixture of HfO ₂ and SiO ₂ after the annealing process. The crystalline structure and formation of GaO in the film affect the band offsets between GaAs and the high-k HfO ₂ dielectric. Moreover, the Si passivation effectively suppressed the interfacial defects caused by GaO diffusion during the annealing treatment. The nitridation cause As diffusion to oxygen vacancy of HfO ₂ result in the increase of the interfacial defect.

Original language	English
Pages (from-to)	375-381
Number of pages	7
Journal	Applied Surface Science
Volume	283
DOIs	https://doi.org/10.1016/j.apsusc.2013.06.118
State	Published - 15 Oct 2013

Keywords

Atomic layer deposition
GaAs
High-k dielectric
Passivation

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Park, S. H., Kang, Y. S., Chae, J., Kim, H. J., Cho, M. H., Ko, D. H., Byun, Y. C., Kim, H., Cho, S. W., Kim, C. Y., & Seo, J. H. (2013). Control of the interfacial reaction in HfO ₂ on Si-passivated GaAs Applied Surface Science, 283, 375-381. https://doi.org/10.1016/j.apsusc.2013.06.118

@article{96b77c41a9fa48fda15e5290ee02440c,

title = " Control of the interfacial reaction in HfO 2 on Si-passivated GaAs ",

abstract = " The physical and electrical effects caused by interfacial reactions of HfO 2 on Si-passivated GaAs were investigated by various methods. The results showed that the Si layer decreases the diffusion and formation of GaO. Moreover, post-nitridation in HfO 2 /Si/GaAs significantly reduced the formation of AsO and GaO. The depth profiling data showed that two separated layered structures were formed with HfO 2 and a mixture of HfO 2 and SiO 2 after the annealing process. The crystalline structure and formation of GaO in the film affect the band offsets between GaAs and the high-k HfO 2 dielectric. Moreover, the Si passivation effectively suppressed the interfacial defects caused by GaO diffusion during the annealing treatment. The nitridation cause As diffusion to oxygen vacancy of HfO 2 result in the increase of the interfacial defect.",

keywords = "Atomic layer deposition, GaAs, High-k dielectric, Passivation",

author = "Park, \{Sang Han\} and Kang, \{Yu Seon\} and Jimin Chae and Kim, \{Hyo Jin\} and Cho, \{Mann Ho\} and Ko, \{Dae Hong\} and Byun, \{Young Chul\} and Hyoungsub Kim and Cho, \{Sang Wan\} and Kim, \{Chung Yi\} and Seo, \{Jung Hye\}",

year = "2013",

month = oct,

day = "15",

doi = "10.1016/j.apsusc.2013.06.118",

language = "English",

volume = "283",

pages = "375--381",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Control of the interfacial reaction in HfO 2 on Si-passivated GaAs

AU - Park, Sang Han

AU - Kang, Yu Seon

AU - Chae, Jimin

AU - Kim, Hyo Jin

AU - Cho, Mann Ho

AU - Ko, Dae Hong

AU - Byun, Young Chul

AU - Kim, Hyoungsub

AU - Cho, Sang Wan

AU - Kim, Chung Yi

AU - Seo, Jung Hye

PY - 2013/10/15

Y1 - 2013/10/15

N2 - The physical and electrical effects caused by interfacial reactions of HfO 2 on Si-passivated GaAs were investigated by various methods. The results showed that the Si layer decreases the diffusion and formation of GaO. Moreover, post-nitridation in HfO 2 /Si/GaAs significantly reduced the formation of AsO and GaO. The depth profiling data showed that two separated layered structures were formed with HfO 2 and a mixture of HfO 2 and SiO 2 after the annealing process. The crystalline structure and formation of GaO in the film affect the band offsets between GaAs and the high-k HfO 2 dielectric. Moreover, the Si passivation effectively suppressed the interfacial defects caused by GaO diffusion during the annealing treatment. The nitridation cause As diffusion to oxygen vacancy of HfO 2 result in the increase of the interfacial defect.

AB - The physical and electrical effects caused by interfacial reactions of HfO 2 on Si-passivated GaAs were investigated by various methods. The results showed that the Si layer decreases the diffusion and formation of GaO. Moreover, post-nitridation in HfO 2 /Si/GaAs significantly reduced the formation of AsO and GaO. The depth profiling data showed that two separated layered structures were formed with HfO 2 and a mixture of HfO 2 and SiO 2 after the annealing process. The crystalline structure and formation of GaO in the film affect the band offsets between GaAs and the high-k HfO 2 dielectric. Moreover, the Si passivation effectively suppressed the interfacial defects caused by GaO diffusion during the annealing treatment. The nitridation cause As diffusion to oxygen vacancy of HfO 2 result in the increase of the interfacial defect.

KW - Atomic layer deposition

KW - GaAs

KW - High-k dielectric

KW - Passivation

UR - https://www.scopus.com/pages/publications/84883181197

U2 - 10.1016/j.apsusc.2013.06.118

DO - 10.1016/j.apsusc.2013.06.118

M3 - Article

AN - SCOPUS:84883181197

SN - 0169-4332

VL - 283

SP - 375

EP - 381

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Control of the interfacial reaction in HfO ₂ on Si-passivated GaAs

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Keywords

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