Control of chemical residue on photomasks using thermal treatment

Han Byul Kang; Yong Dae Kim; Jong Min Kim; Hyun Joon Cho; Moon Hwan Choi; Sang Soo Choi; Jee Hwan Bae; Cheol Woong Yang

doi:10.1117/1.2435715

Control of chemical residue on photomasks using thermal treatment

Han Byul Kang, Yong Dae Kim, Jong Min Kim, Hyun Joon Cho, Moon Hwan Choi, Sang Soo Choi, Jee Hwan Bae, Cheol Woong Yang

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We choose thermal treatment as part of a methodology to remove chemical residue on the surface of a mask. This new step of thermal treatment is inserted into our standard cleaning process for embedded attenuate phase shift masks (EAPSMs). The treatment is carried out in a modified hot plate system at various temperatures and times. After thermal treatment, ion chromatography measures the residual ions on a given surface. The thermal treatment is found to considerably reduce residual sulfate ions on the mask surface. The remaining sulfate ions on the mask are <0.18 ng/cm² using thermal treatment.

Original language	English
Article number	013008
Journal	Journal of Micro/Nanolithography, MEMS, and MOEMS
Volume	6
Issue number	1
DOIs	https://doi.org/10.1117/1.2435715
State	Published - 2007

Keywords

Chemical residue
Chromatography
Phase shift mask
Thermal treatment

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10.1117/1.2435715

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title = "Control of chemical residue on photomasks using thermal treatment",

abstract = "We choose thermal treatment as part of a methodology to remove chemical residue on the surface of a mask. This new step of thermal treatment is inserted into our standard cleaning process for embedded attenuate phase shift masks (EAPSMs). The treatment is carried out in a modified hot plate system at various temperatures and times. After thermal treatment, ion chromatography measures the residual ions on a given surface. The thermal treatment is found to considerably reduce residual sulfate ions on the mask surface. The remaining sulfate ions on the mask are <0.18 ng/cm2 using thermal treatment.",

keywords = "Chemical residue, Chromatography, Phase shift mask, Thermal treatment",

author = "Kang, \{Han Byul\} and Kim, \{Yong Dae\} and Kim, \{Jong Min\} and Cho, \{Hyun Joon\} and Choi, \{Moon Hwan\} and Choi, \{Sang Soo\} and Bae, \{Jee Hwan\} and Yang, \{Cheol Woong\}",

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T1 - Control of chemical residue on photomasks using thermal treatment

AU - Kang, Han Byul

AU - Kim, Yong Dae

AU - Kim, Jong Min

AU - Cho, Hyun Joon

AU - Choi, Moon Hwan

AU - Choi, Sang Soo

AU - Bae, Jee Hwan

AU - Yang, Cheol Woong

PY - 2007

Y1 - 2007

N2 - We choose thermal treatment as part of a methodology to remove chemical residue on the surface of a mask. This new step of thermal treatment is inserted into our standard cleaning process for embedded attenuate phase shift masks (EAPSMs). The treatment is carried out in a modified hot plate system at various temperatures and times. After thermal treatment, ion chromatography measures the residual ions on a given surface. The thermal treatment is found to considerably reduce residual sulfate ions on the mask surface. The remaining sulfate ions on the mask are <0.18 ng/cm2 using thermal treatment.

AB - We choose thermal treatment as part of a methodology to remove chemical residue on the surface of a mask. This new step of thermal treatment is inserted into our standard cleaning process for embedded attenuate phase shift masks (EAPSMs). The treatment is carried out in a modified hot plate system at various temperatures and times. After thermal treatment, ion chromatography measures the residual ions on a given surface. The thermal treatment is found to considerably reduce residual sulfate ions on the mask surface. The remaining sulfate ions on the mask are <0.18 ng/cm2 using thermal treatment.

KW - Chemical residue

KW - Chromatography

KW - Phase shift mask

KW - Thermal treatment

UR - https://www.scopus.com/pages/publications/34547217500

U2 - 10.1117/1.2435715

DO - 10.1117/1.2435715

M3 - Article

AN - SCOPUS:34547217500

SN - 1932-5150

VL - 6

JO - Journal of Micro/Nanolithography, MEMS, and MOEMS

JF - Journal of Micro/Nanolithography, MEMS, and MOEMS

IS - 1

M1 - 013008

ER -

Control of chemical residue on photomasks using thermal treatment

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Keywords

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