Skip to main navigation Skip to search Skip to main content

Control of chemical residue on photomasks using thermal treatment

  • Han Byul Kang
  • , Yong Dae Kim
  • , Jong Min Kim
  • , Hyun Joon Cho
  • , Moon Hwan Choi
  • , Sang Soo Choi
  • , Jee Hwan Bae
  • , Cheol Woong Yang

Research output: Contribution to journalArticlepeer-review

Abstract

We choose thermal treatment as part of a methodology to remove chemical residue on the surface of a mask. This new step of thermal treatment is inserted into our standard cleaning process for embedded attenuate phase shift masks (EAPSMs). The treatment is carried out in a modified hot plate system at various temperatures and times. After thermal treatment, ion chromatography measures the residual ions on a given surface. The thermal treatment is found to considerably reduce residual sulfate ions on the mask surface. The remaining sulfate ions on the mask are <0.18 ng/cm2 using thermal treatment.

Original languageEnglish
Article number013008
JournalJournal of Micro/Nanolithography, MEMS, and MOEMS
Volume6
Issue number1
DOIs
StatePublished - 2007

Keywords

  • Chemical residue
  • Chromatography
  • Phase shift mask
  • Thermal treatment

Fingerprint

Dive into the research topics of 'Control of chemical residue on photomasks using thermal treatment'. Together they form a unique fingerprint.

Cite this