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Contemporary Challenges in van der Waals 2D Semiconductors

  • Balakrishnan Kirubasankar
  • , Ashok Mondal
  • , Seok Joon Yun
  • , Debottam Daw
  • , Yongshan Xu
  • , Lan Anh T. Nguyen
  • , Yeonjeong Koo
  • , Kamal Kumar Paul
  • , Heemyoung Hong
  • , Hyeongwoo Lee
  • , Yuting Luo
  • , Kailang Liu
  • , Naoki Higashitarumizu
  • , Daniel Erkensten
  • , Chang Yun Heo
  • , Yu Rim Jeon
  • , Taemin Lee
  • , Dae Hyun Nam
  • , Xinghui Liu
  • , Soo Min Kim
  • Dinh Loc Duong, Qinke Wu, Deji Akinwande, Mark C. Hersam, Ali Javey, Ermin Malic, Bilu Liu, Tianyou Zhai, Heejun Yang, Kyoung Duck Park, Ki Kang Kim, Young Hee Lee
  • Hubei University of Technology
  • Sungkyunkwan University
  • University of Ulsan
  • Huazhong University of Science and Technology
  • Pohang University of Science and Technology
  • University of Cambridge
  • Korea Advanced Institute of Science and Technology
  • Tsinghua University
  • University of California at Berkeley
  • Lawrence Berkeley National Laboratory
  • Nanyang Technological University
  • University of Marburg
  • University of Texas at Austin
  • Daegu Gyeongbuk Institute of Science and Technology
  • Korea University
  • National Key Laboratory of Aerospace Chemical Power
  • Sookmyung Women's University
  • University of Maine
  • Northwestern University
  • Yonsei University
  • Institute for Basic Science

Research output: Contribution to journalReview articlepeer-review

Abstract

van der Waals (vdW) layered semiconductors have emerged as a unique class of quantum materials distinguished from their bulk counterparts by reduced dielectric screening, strong Coulomb interactions, large exciton binding energies, strong spin–orbit coupling, and pronounced thickness-dependent band structures. These fundamental attributes have enabled the exploration of exotic many-body physics and a broad spectrum of device applications, ranging from field-effect transistors and ferroelectric switches to optoelectronics, magnetic semiconductors, neuromorphic computing, and energy harvesting systems. Despite remarkable advances, critical challenges remain in the controlled synthesis of high-quality crystals, formation of low-resistance contacts, integration of stable and scalable gate dielectrics, and reliable device performance at the wafer scale. In this mega-review, we provide a comprehensive overview of contemporary challenges and future opportunities in vdW-layered semiconductors, structured across nine themes: growth and heterostructures of transition metal dichalcogenides, Ohmic contacts, emerging gate dielectrics, high-performance low-power field-effect transistors (FETs), diluted magnetic semiconductors, plasmonics and exciton propagation, hot-carrier solar cells, bioinspired neuromorphic computing, and electrocatalytic/photocatalytic energy conversion. By consolidating fundamental insights and device-level perspectives, this review aims to chart a roadmap for advancing vdW semiconductors from laboratory-scale discoveries to transformative technologies in electronics, optoelectronics, spintronics, and sustainable energy systems.

Original languageEnglish
Pages (from-to)3228-3361
Number of pages134
JournalACS Nano
Volume20
Issue number4
DOIs
StatePublished - 3 Feb 2026

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • 2D layered van der Waals materials
  • chemical vapor deposition
  • electronic
  • energy conversion
  • optoelectronics
  • spintronics
  • technology transfer
  • transition metal dichalcogenides

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