TY - GEN
T1 - Construction of probe-based data storage with ultra-high areal density
AU - Shin, Hyunjung
AU - Jeon, Jong Up
AU - Hong, Seungbum
AU - Choi, Jae Joon
AU - Jeong, Hee Moon
AU - Min, Dong Ki
AU - Kim, Yong Il
AU - Lee, Chang Soo
AU - Lee, Sukhan
N1 - Publisher Copyright:
© 2001 IEEE.
PY - 2001
Y1 - 2001
N2 - Our probe-based data storage (PDS) system consists of four parts: signal processing module, multi-probe array, xy-planar actuator, and recording media. The signalprocessing module has 2 layers attached to each other. The first layer has 3 D wiring, and it is assembled to the second layer (ASIC module) for the signal processing circuit. The multi-probe array is designed to increase recording and reading speed of the data bits. Each probe has cantilever and tip that are characterized by a tip height of 15 urn, a tip radius of 15 nm, a natural frequency of 18.75 kHz and a DC sensitivity of 16.7 nm/V. Poly-silicon probe was fabricated by molding technique to produce high aspect ratio tips. The electrostatic planar actuator serves as a scanner that positions the probe to the right place by moving the media in xy-plane. The moving distance was ±40 urn at 10±10 V, DC gain was 3.04 μm/V at 4 V, and the resonance frequency was 143 Hz. The recording media stores the recorded information in the form of electric polarization in ferroelectric materials. Ferroelectric Pb(Zr,Ti)O3 thin film is a candidate material for the media, and it can yield a memory density as high as 400 Gb/in2 by recording bits as small as 35 nm in diameter. The bits are fully rewritable and retain the information for a generation at the temperature range below than 50 °C.
AB - Our probe-based data storage (PDS) system consists of four parts: signal processing module, multi-probe array, xy-planar actuator, and recording media. The signalprocessing module has 2 layers attached to each other. The first layer has 3 D wiring, and it is assembled to the second layer (ASIC module) for the signal processing circuit. The multi-probe array is designed to increase recording and reading speed of the data bits. Each probe has cantilever and tip that are characterized by a tip height of 15 urn, a tip radius of 15 nm, a natural frequency of 18.75 kHz and a DC sensitivity of 16.7 nm/V. Poly-silicon probe was fabricated by molding technique to produce high aspect ratio tips. The electrostatic planar actuator serves as a scanner that positions the probe to the right place by moving the media in xy-plane. The moving distance was ±40 urn at 10±10 V, DC gain was 3.04 μm/V at 4 V, and the resonance frequency was 143 Hz. The recording media stores the recorded information in the form of electric polarization in ferroelectric materials. Ferroelectric Pb(Zr,Ti)O3 thin film is a candidate material for the media, and it can yield a memory density as high as 400 Gb/in2 by recording bits as small as 35 nm in diameter. The bits are fully rewritable and retain the information for a generation at the temperature range below than 50 °C.
UR - https://www.scopus.com/pages/publications/14544307406
U2 - 10.1109/NANO.2001.966420
DO - 10.1109/NANO.2001.966420
M3 - Conference contribution
AN - SCOPUS:14544307406
T3 - Proceedings of the IEEE Conference on Nanotechnology
SP - 207
EP - 212
BT - Proceedings of the 2001 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001
PB - IEEE Computer Society
T2 - 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001
Y2 - 28 October 2001 through 30 October 2001
ER -