Abstract
This paper describes the conduction mechanism of the thin film Si for the application of solar cells. Some of the theoretical and experimental conduction processes of the a-Si:H and poly-Si are presented. The Schottky contact was formed by depositing semi-transparent metals on top of the silicon films. Dark current-voltage (I-V), illuminated I-V, current-voltage-temperature (I-V-T), and capacitance-voltage (C-V) measurements have been performed using the Schottky diode (Pd/Si/Mo) structure before and after anneal treatment. We observed that SCLC dominated for the intrinsic aSi:H and poly-Si. The Frenkel-Poole conduction mechanism fits well for the as-grown n-type a-Si:H. The doped poly-Si exhibited tunneling field emission to dominate the conduction process.
| Original language | English |
|---|---|
| Pages (from-to) | S245-S250 |
| Journal | Journal of the Korean Physical Society |
| Volume | 30 |
| Issue number | SUPPL. PART 1 |
| State | Published - 1997 |
