Conduction processes in a-Si:H and poly-Si films

This paper describes the conduction mechanism of the thin film Si for the application of solar cells. Some of the theoretical and experimental conduction processes of the a-Si:H and poly-Si are presented. The Schottky contact was formed by depositing semi-transparent metals on top of the silicon films. Dark current-voltage (I-V), illuminated I-V, current-voltage-temperature (I-V-T), and capacitance-voltage (C-V) measurements have been performed using the Schottky diode (Pd/Si/Mo) structure before and after anneal treatment. We observed that SCLC dominated for the intrinsic aSi:H and poly-Si. The Frenkel-Poole conduction mechanism fits well for the as-grown n-type a-Si:H. The doped poly-Si exhibited tunneling field emission to dominate the conduction process.