Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb (Zrx Ti1-x) O3 thin films

J. Y. Jo; S. M. Yang; H. S. Han; D. J. Kim; W. S. Choi; T. W. Noh; T. K. Song; J. G. Yoon; C. Y. Koo; J. H. Cheon; S. H. Kim

doi:10.1063/1.2824839

Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb (Zrx Ti1-x) O3 thin films

J. Y. Jo
, S. M. Yang
, H. S. Han
, D. J. Kim
, W. S. Choi
, T. W. Noh
, T. K. Song
, J. G. Yoon
, C. Y. Koo
, J. H. Cheon
, S. H. Kim

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

We investigated the time-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb (Zrx Ti1-x) O3 thin films with various Zr concentrations. We could explain all the polarization switching behaviors well by assuming Lorentzian distributions in the logarithmic polarization switching time [refer to J. Y. Jo, Phys. Rev. Lett. 99, 267602 (2007)]. Based on this analysis, we found that the Zr ion substitution for Ti ions would induce broad distributions in the local field due to defect dipoles, which makes the ferroelectric domain switching occur more easily.

Original language	English
Article number	012917
Journal	Applied Physics Letters
Volume	92
Issue number	1
DOIs	https://doi.org/10.1063/1.2824839
State	Published - 2008
Externally published	Yes

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10.1063/1.2824839

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@article{c1506cbb05084ae5a67605794e4eae62,

title = "Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb (Zrx Ti1-x) O3 thin films",

abstract = "We investigated the time-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb (Zrx Ti1-x) O3 thin films with various Zr concentrations. We could explain all the polarization switching behaviors well by assuming Lorentzian distributions in the logarithmic polarization switching time [refer to J. Y. Jo, Phys. Rev. Lett. 99, 267602 (2007)]. Based on this analysis, we found that the Zr ion substitution for Ti ions would induce broad distributions in the local field due to defect dipoles, which makes the ferroelectric domain switching occur more easily.",

author = "Jo, \{J. Y.\} and Yang, \{S. M.\} and Han, \{H. S.\} and Kim, \{D. J.\} and Choi, \{W. S.\} and Noh, \{T. W.\} and Song, \{T. K.\} and Yoon, \{J. G.\} and Koo, \{C. Y.\} and Cheon, \{J. H.\} and Kim, \{S. H.\}",

year = "2008",

doi = "10.1063/1.2824839",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb (Zrx Ti1-x) O3 thin films

AU - Jo, J. Y.

AU - Yang, S. M.

AU - Han, H. S.

AU - Kim, D. J.

AU - Choi, W. S.

AU - Noh, T. W.

AU - Song, T. K.

AU - Yoon, J. G.

AU - Koo, C. Y.

AU - Cheon, J. H.

AU - Kim, S. H.

PY - 2008

Y1 - 2008

N2 - We investigated the time-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb (Zrx Ti1-x) O3 thin films with various Zr concentrations. We could explain all the polarization switching behaviors well by assuming Lorentzian distributions in the logarithmic polarization switching time [refer to J. Y. Jo, Phys. Rev. Lett. 99, 267602 (2007)]. Based on this analysis, we found that the Zr ion substitution for Ti ions would induce broad distributions in the local field due to defect dipoles, which makes the ferroelectric domain switching occur more easily.

AB - We investigated the time-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb (Zrx Ti1-x) O3 thin films with various Zr concentrations. We could explain all the polarization switching behaviors well by assuming Lorentzian distributions in the logarithmic polarization switching time [refer to J. Y. Jo, Phys. Rev. Lett. 99, 267602 (2007)]. Based on this analysis, we found that the Zr ion substitution for Ti ions would induce broad distributions in the local field due to defect dipoles, which makes the ferroelectric domain switching occur more easily.

UR - https://www.scopus.com/pages/publications/38049082507

U2 - 10.1063/1.2824839

DO - 10.1063/1.2824839

M3 - Article

AN - SCOPUS:38049082507

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012917

ER -

Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb (Zrx Ti1-x) O3 thin films

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