TY - JOUR
T1 - Comparison of the characteristics of semiconductor gas sensors with different transducers fabricated on the same substrate
AU - Jung, Gyuweon
AU - Shin, Wonjun
AU - Hong, Seongbin
AU - Jeong, Yujeong
AU - Park, Jinwoo
AU - Kim, Donghee
AU - Bae, Jong Ho
AU - Park, Byung Gook
AU - Lee, Jong Ho
N1 - Publisher Copyright:
© 2021 Elsevier B.V.
PY - 2021/5/15
Y1 - 2021/5/15
N2 - The semiconductor-type gas sensor consists of a transducer and a sensing material. Most of the research on the sensor has focused on sensing materials. In this study, the characteristics of gas sensors using three different transducers (MOSFET, resistor, and TFT) are compared. For a fair comparison, the three types of gas sensors are fabricated through the same process on one chip and have the same sensing material. Indium oxide (In2O3) and NO2 gas are used as the sensing material and the target gas, respectively. The low-frequency noise (LFN) characteristics, response, signal to noise ratio (SNR), and limit of detection (LOD) of the three types of gas sensors are investigated and compared. Since the MOSFET-type gas sensor uses crystalline Si as the current path, the current normalized noise of the sensor is ∼105 smaller than that of the resistor- and TFT-type gas sensors using polycrystalline In2O3 as the current path. However, when reacting to 500 ppb NO2 gas, the response is the smallest in the MOSFET-type gas sensor and the largest in the TFT-type gas sensor (MOSFET: ∼2.3 × 102, resistor: 3.3 × 103 and TFT: ∼3.2 × 107). The SNR is large in order of TFT-, MOSFET-, resistor-type gas sensor over the entire range of measured gas concentrations (20 ∼ 500 ppb). The LODs of TFT-, MOSFET- and resistor-type gas sensors are 0.017, 0.300, and 26.3 ppb respectively. Considering the response, SNR and LOD, the TFT-type gas sensor is the best among the three-types of sensors.
AB - The semiconductor-type gas sensor consists of a transducer and a sensing material. Most of the research on the sensor has focused on sensing materials. In this study, the characteristics of gas sensors using three different transducers (MOSFET, resistor, and TFT) are compared. For a fair comparison, the three types of gas sensors are fabricated through the same process on one chip and have the same sensing material. Indium oxide (In2O3) and NO2 gas are used as the sensing material and the target gas, respectively. The low-frequency noise (LFN) characteristics, response, signal to noise ratio (SNR), and limit of detection (LOD) of the three types of gas sensors are investigated and compared. Since the MOSFET-type gas sensor uses crystalline Si as the current path, the current normalized noise of the sensor is ∼105 smaller than that of the resistor- and TFT-type gas sensors using polycrystalline In2O3 as the current path. However, when reacting to 500 ppb NO2 gas, the response is the smallest in the MOSFET-type gas sensor and the largest in the TFT-type gas sensor (MOSFET: ∼2.3 × 102, resistor: 3.3 × 103 and TFT: ∼3.2 × 107). The SNR is large in order of TFT-, MOSFET-, resistor-type gas sensor over the entire range of measured gas concentrations (20 ∼ 500 ppb). The LODs of TFT-, MOSFET- and resistor-type gas sensors are 0.017, 0.300, and 26.3 ppb respectively. Considering the response, SNR and LOD, the TFT-type gas sensor is the best among the three-types of sensors.
KW - Limit of detection (LOD)
KW - Low-frequency noise (LFN)
KW - MOSFET-type gas sensor
KW - Resistor-type gas sensor
KW - Sensing mechanism
KW - Signal to noise ratio (SNR)
KW - TFT-type gas sensor
UR - https://www.scopus.com/pages/publications/85101673467
U2 - 10.1016/j.snb.2021.129661
DO - 10.1016/j.snb.2021.129661
M3 - Article
AN - SCOPUS:85101673467
SN - 0925-4005
VL - 335
JO - Sensors and Actuators, B: Chemical
JF - Sensors and Actuators, B: Chemical
M1 - 129661
ER -