Comparison of line edge roughness and profile angles of chemical vapor deposited amorphous carbon etched in O2/N2/Ar and H 2/N2/Ar inductively coupled plasmas

Y. R. Park; B. S. Kwon; C. Y. Jung; W. Heo; N. E. Lee; J. W. Shon

doi:10.1016/j.tsf.2011.01.383

Comparison of line edge roughness and profile angles of chemical vapor deposited amorphous carbon etched in O₂/N₂/Ar and H ₂/N₂/Ar inductively coupled plasmas

Y. R. Park, B. S. Kwon, C. Y. Jung, W. Heo, N. E. Lee, J. W. Shon

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this study, we compared the line edge roughnesses (LER) and profile angles of chemical vapor deposited (CVD) amorphous carbon (a-C) patterns etched in an inductively coupled plasma (ICP) etcher produced by varying process parameters such as the N₂ gas flow ratio, Q (N₂), and dc self-bias voltage (V_dc) in O₂/N₂/Ar and H ₂/N₂/Ar plasmas. The tendencies of the LER and profile angle values of the etched CVD a-C pattern were similar in both plasmas. The LER was smaller in the O₂/N₂/Ar than in the H ₂/N₂/Ar plasmas, and the profile angle was larger in the O₂/N₂/Ar than in the H₂/N₂/Ar plasmas under the same processes conditions. The use of O₂/N ₂/Ar plasma was more advantageous than the H₂/N ₂/Ar plasma for controlling LER and profile angle.

Original language	English
Pages (from-to)	6755-6758
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	20
DOIs	https://doi.org/10.1016/j.tsf.2011.01.383
State	Published - 1 Aug 2011

Keywords

CVD a-C
Etching
Inductively coupled plasma
Line edge roughness (LER)
Profile angle

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10.1016/j.tsf.2011.01.383

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title = "Comparison of line edge roughness and profile angles of chemical vapor deposited amorphous carbon etched in O2/N2/Ar and H 2/N2/Ar inductively coupled plasmas",

abstract = "In this study, we compared the line edge roughnesses (LER) and profile angles of chemical vapor deposited (CVD) amorphous carbon (a-C) patterns etched in an inductively coupled plasma (ICP) etcher produced by varying process parameters such as the N2 gas flow ratio, Q (N2), and dc self-bias voltage (Vdc) in O2/N2/Ar and H 2/N2/Ar plasmas. The tendencies of the LER and profile angle values of the etched CVD a-C pattern were similar in both plasmas. The LER was smaller in the O2/N2/Ar than in the H 2/N2/Ar plasmas, and the profile angle was larger in the O2/N2/Ar than in the H2/N2/Ar plasmas under the same processes conditions. The use of O2/N 2/Ar plasma was more advantageous than the H2/N 2/Ar plasma for controlling LER and profile angle.",

keywords = "CVD a-C, Etching, Inductively coupled plasma, Line edge roughness (LER), Profile angle",

author = "Park, \{Y. R.\} and Kwon, \{B. S.\} and Jung, \{C. Y.\} and W. Heo and Lee, \{N. E.\} and Shon, \{J. W.\}",

year = "2011",

month = aug,

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doi = "10.1016/j.tsf.2011.01.383",

language = "English",

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TY - JOUR

T1 - Comparison of line edge roughness and profile angles of chemical vapor deposited amorphous carbon etched in O2/N2/Ar and H 2/N2/Ar inductively coupled plasmas

AU - Park, Y. R.

AU - Kwon, B. S.

AU - Jung, C. Y.

AU - Heo, W.

AU - Lee, N. E.

AU - Shon, J. W.

PY - 2011/8/1

Y1 - 2011/8/1

N2 - In this study, we compared the line edge roughnesses (LER) and profile angles of chemical vapor deposited (CVD) amorphous carbon (a-C) patterns etched in an inductively coupled plasma (ICP) etcher produced by varying process parameters such as the N2 gas flow ratio, Q (N2), and dc self-bias voltage (Vdc) in O2/N2/Ar and H 2/N2/Ar plasmas. The tendencies of the LER and profile angle values of the etched CVD a-C pattern were similar in both plasmas. The LER was smaller in the O2/N2/Ar than in the H 2/N2/Ar plasmas, and the profile angle was larger in the O2/N2/Ar than in the H2/N2/Ar plasmas under the same processes conditions. The use of O2/N 2/Ar plasma was more advantageous than the H2/N 2/Ar plasma for controlling LER and profile angle.

AB - In this study, we compared the line edge roughnesses (LER) and profile angles of chemical vapor deposited (CVD) amorphous carbon (a-C) patterns etched in an inductively coupled plasma (ICP) etcher produced by varying process parameters such as the N2 gas flow ratio, Q (N2), and dc self-bias voltage (Vdc) in O2/N2/Ar and H 2/N2/Ar plasmas. The tendencies of the LER and profile angle values of the etched CVD a-C pattern were similar in both plasmas. The LER was smaller in the O2/N2/Ar than in the H 2/N2/Ar plasmas, and the profile angle was larger in the O2/N2/Ar than in the H2/N2/Ar plasmas under the same processes conditions. The use of O2/N 2/Ar plasma was more advantageous than the H2/N 2/Ar plasma for controlling LER and profile angle.

KW - CVD a-C

KW - Etching

KW - Inductively coupled plasma

KW - Line edge roughness (LER)

KW - Profile angle

UR - https://www.scopus.com/pages/publications/80051551853

U2 - 10.1016/j.tsf.2011.01.383

DO - 10.1016/j.tsf.2011.01.383

M3 - Article

AN - SCOPUS:80051551853

SN - 0040-6090

VL - 519

SP - 6755

EP - 6758

JO - Thin Solid Films

JF - Thin Solid Films

IS - 20

ER -

Comparison of line edge roughness and profile angles of chemical vapor deposited amorphous carbon etched in O₂/N₂/Ar and H ₂/N₂/Ar inductively coupled plasmas

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Keywords

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