Comparison frequency doubling and charge pump matching techniques for dual-band ΔΣ fractional-N frequency synthesizer

Hyungki Huh, Yido Koo, Kang Yoon Lee, Yeonkyeong Ok, Sungho Lee, Daehyun Kwon, Jeongwoo Lee, Joonbae Park, Kyeongho Lee, Deog Kyoon Jeong, Wonchan Kim

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

The frequency synthesizer with two LC-VCOs is fully integrated in a 0.35-μm CMOS technology. In supporting dual bands, all building blocks except VCOs are shared. A current compensation scheme using a replica charge pump improves the linearity of the frequency synthesizer and, thus, suppresses spurious tones. To reduce the quantization noise from a ΔΣ modulator and the noise from the building blocks except the VCO, the proposed architecture uses a frequency doubler with a noise-insensitive duty-cycle correction circuit (DCC) in the reference clock path. Power consumption is 37.8 mW with a 2.7-V supply. The proposed frequency synthesizer supports 10-kHz channel spacing with the measured phase noise of -114 dBc/Hz and -141 dBc/Hz at 100-kHz and 1.25-MHz offsets, respectively, in the PCS band. The fractional spurious tone at 10-kHz offset is under -54 dBc.

Original languageEnglish
Pages (from-to)2228-2235
Number of pages8
JournalIEEE Journal of Solid-State Circuits
Volume40
Issue number11
DOIs
StatePublished - Nov 2005
Externally publishedYes

Keywords

  • CMOS RF
  • Current mismatch compensation
  • Folded noise
  • Fractional-AT frequency synthesizers
  • Frequency doubler
  • Phase noise
  • Phase-locked loops

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