Comparative study of global warming effects during silicon nitride etching using C3F6O/O2 and C3F6/O2 gas mixtures

Ka Youn Kim; Hock Key Moon; Nae Eung Lee; Bo Han Hong; Soo Ho Oh

doi:10.1007/s13391-014-4080-z

Comparative study of global warming effects during silicon nitride etching using C₃F₆O/O₂ and C₃F₆/O₂ gas mixtures

Ka Youn Kim
, Hock Key Moon
, Nae Eung Lee
, Bo Han Hong
, Soo Ho Oh

Department of Advanced Materials Science and Engineering

Sungkyunkwan University
WONIK IPS Ltd

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

C₃F₆ and C₃F₆ gases were investigated as replacement gases for SF₆ used in display industry due to their low global warming potential and short lifetime. In the C₃F₆/O₂ and C₃F₆/O₂ capacitively coupled plasmas, Si₃N₄ etch conditions were varied by controlling process parameters. The global warming effects were quantified as million metric ton carbon equivalents (MMTCEs) obtained from the volumetric emission of by-product and etch gases. A lower MMTCE value and higher etch rate process with combination of high and low source frequencies, f_HF (27.12 MHz)/f_LF (2 MHz), were observed for the C₃F₆/O₂ chemistry than for the C₃F₆/O₂ chemistry.

Original language	English
Pages (from-to)	93-99
Number of pages	7
Journal	Electronic Materials Letters
Volume	11
Issue number	1
DOIs	https://doi.org/10.1007/s13391-014-4080-z
State	Published - 10 Jan 2015

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 13 Climate Action

Keywords

Capacitive coupled plasma
Display
Etching
Global warming
Perfluorcompound
Silicon nitride (SiN)

Access to Document

10.1007/s13391-014-4080-z

Cite this

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title = "Comparative study of global warming effects during silicon nitride etching using C3F6O/O2 and C3F6/O2 gas mixtures",

abstract = "C3F6 and C3F6 gases were investigated as replacement gases for SF6 used in display industry due to their low global warming potential and short lifetime. In the C3F6/O2 and C3F6/O2 capacitively coupled plasmas, Si3N4 etch conditions were varied by controlling process parameters. The global warming effects were quantified as million metric ton carbon equivalents (MMTCEs) obtained from the volumetric emission of by-product and etch gases. A lower MMTCE value and higher etch rate process with combination of high and low source frequencies, fHF (27.12 MHz)/fLF (2 MHz), were observed for the C3F6/O2 chemistry than for the C3F6/O2 chemistry.",

keywords = "Capacitive coupled plasma, Display, Etching, Global warming, Perfluorcompound, Silicon nitride (SiN)",

author = "Kim, \{Ka Youn\} and Moon, \{Hock Key\} and Lee, \{Nae Eung\} and Hong, \{Bo Han\} and Oh, \{Soo Ho\}",

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T1 - Comparative study of global warming effects during silicon nitride etching using C3F6O/O2 and C3F6/O2 gas mixtures

AU - Kim, Ka Youn

AU - Moon, Hock Key

AU - Lee, Nae Eung

AU - Hong, Bo Han

AU - Oh, Soo Ho

N1 - Publisher Copyright: © KIM and Springer.

PY - 2015/1/10

Y1 - 2015/1/10

N2 - C3F6 and C3F6 gases were investigated as replacement gases for SF6 used in display industry due to their low global warming potential and short lifetime. In the C3F6/O2 and C3F6/O2 capacitively coupled plasmas, Si3N4 etch conditions were varied by controlling process parameters. The global warming effects were quantified as million metric ton carbon equivalents (MMTCEs) obtained from the volumetric emission of by-product and etch gases. A lower MMTCE value and higher etch rate process with combination of high and low source frequencies, fHF (27.12 MHz)/fLF (2 MHz), were observed for the C3F6/O2 chemistry than for the C3F6/O2 chemistry.

AB - C3F6 and C3F6 gases were investigated as replacement gases for SF6 used in display industry due to their low global warming potential and short lifetime. In the C3F6/O2 and C3F6/O2 capacitively coupled plasmas, Si3N4 etch conditions were varied by controlling process parameters. The global warming effects were quantified as million metric ton carbon equivalents (MMTCEs) obtained from the volumetric emission of by-product and etch gases. A lower MMTCE value and higher etch rate process with combination of high and low source frequencies, fHF (27.12 MHz)/fLF (2 MHz), were observed for the C3F6/O2 chemistry than for the C3F6/O2 chemistry.

KW - Capacitive coupled plasma

KW - Display

KW - Etching

KW - Global warming

KW - Perfluorcompound

KW - Silicon nitride (SiN)

UR - https://www.scopus.com/pages/publications/84922361770

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