Comparative analysis of GaN FET power system for maximizing system benefit

Jung Hoon Ahn, Byoung Kuk Lee, Jong Soo Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

This paper carries out a series of the analysis of the power system using gallium nitride (GaN) FET which has a wide band gap (WBG) characteristics comparing to the conventional silicon (Si) MOSFET-used power system. At first, for the comparison of each semiconductor device, the switching-transient parameter is quantitatively extracted from the released information of GaN FET. And GaN FET model which reflect this dynamic property is configured. By using this model, the performance of GaN FET is analyzed comparing to Si MOSFET. As a result, GaN FET power system, designed by the optimal point suggested in this paper, can reduce the loss by 25.5% and the volume by 78.6% of major components comparing conventional Si MOSFET power system.

Original languageEnglish
Title of host publication2014 17th International Conference on Electrical Machines and Systems, ICEMS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1915-1920
Number of pages6
ISBN (Electronic)9781479951611
DOIs
StatePublished - 2014
Event2014 17th International Conference on Electrical Machines and Systems, ICEMS 2014 - Hangzhou, China
Duration: 22 Oct 201425 Oct 2014

Publication series

Name2014 17th International Conference on Electrical Machines and Systems, ICEMS 2014

Conference

Conference2014 17th International Conference on Electrical Machines and Systems, ICEMS 2014
Country/TerritoryChina
CityHangzhou
Period22/10/1425/10/14

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