Abstract
In the present study, hydrogen water was applied to ceria abrasive removal in post-CMP cleaning. The surface of the ceria abrasive was reduced by the hydrogen water from the Ce4+ to Ce3+ state. Reduction of the ceria abrasive can weaken the bonding between ceria and the SiO2 wafer surface. X-ray photoelectron spectroscopy (XPS) and UV-visible observations were utilized to reveal the reduction from Ce4+ to Ce3+ by hydrogen water. Thus, the remaining ceria particles and Ce-ion concentrations were reduced by 70% and 63%, respectively.
| Original language | English |
|---|---|
| Article number | 044012 |
| Journal | ECS Journal of Solid State Science and Technology |
| Volume | 9 |
| Issue number | 4 |
| DOIs | |
| State | Published - 5 Jan 2020 |