Coexistence of chalcopyrite and CuAu-type ordered structures in In 0.52Al0.48As epilayers grown on InP substrates

Hyung Koun Cho; Dong Chan Kim; Eundeok Sim; Won Suk Han; Sung Bum Bae

doi:10.1016/j.physb.2005.12.151

Coexistence of chalcopyrite and CuAu-type ordered structures in In _0.52Al_0.48As epilayers grown on InP substrates

Hyung Koun Cho
, Dong Chan Kim
, Eundeok Sim
, Won Suk Han
, Sung Bum Bae

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Ordering formation in In_0.52Al_0.48As alloys grown on (0 0 1) InP substrates by metalorganic chemical vapor deposition was investigated using transmission electron microscopy (TEM). In the plan-view selective area diffraction pattern, the 12 superlattice reflections around the transmitted spot and the {2 0 0} spots were observed, which are associated with the chalcopyrite- and CuAu-type ordered structures. In the InAlAs consisting of III-III-V elements, these ordered phases with the rod-shaped domains elongated along the [2 2 0] show the coexistence of CuAu- and chalcopyrite-type ordered structures. An atomic model showing the formation process of the diffraction pattern of the chalcopyrite- and CuAu-type ordered structures is presented here based on the TEM results.

Original language	English
Pages (from-to)	598-601
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.151
State	Published - 1 Apr 2006
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 24 Jul 2005 → 29 Jul 2005

Keywords

InAlAs
MOCVD
Ordering
TEM

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10.1016/j.physb.2005.12.151

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@article{6270abb182b440148b602c2086175adb,

title = "Coexistence of chalcopyrite and CuAu-type ordered structures in In 0.52Al0.48As epilayers grown on InP substrates",

abstract = "Ordering formation in In0.52Al0.48As alloys grown on (0 0 1) InP substrates by metalorganic chemical vapor deposition was investigated using transmission electron microscopy (TEM). In the plan-view selective area diffraction pattern, the 12 superlattice reflections around the transmitted spot and the \{2 0 0\} spots were observed, which are associated with the chalcopyrite- and CuAu-type ordered structures. In the InAlAs consisting of III-III-V elements, these ordered phases with the rod-shaped domains elongated along the [2 2 0] show the coexistence of CuAu- and chalcopyrite-type ordered structures. An atomic model showing the formation process of the diffraction pattern of the chalcopyrite- and CuAu-type ordered structures is presented here based on the TEM results.",

keywords = "InAlAs, MOCVD, Ordering, TEM",

author = "Cho, \{Hyung Koun\} and Kim, \{Dong Chan\} and Eundeok Sim and Han, \{Won Suk\} and Bae, \{Sung Bum\}",

year = "2006",

month = apr,

day = "1",

doi = "10.1016/j.physb.2005.12.151",

language = "English",

volume = "376-377",

pages = "598--601",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "1",

note = "Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

}

TY - JOUR

T1 - Coexistence of chalcopyrite and CuAu-type ordered structures in In 0.52Al0.48As epilayers grown on InP substrates

AU - Cho, Hyung Koun

AU - Kim, Dong Chan

AU - Sim, Eundeok

AU - Han, Won Suk

AU - Bae, Sung Bum

PY - 2006/4/1

Y1 - 2006/4/1

N2 - Ordering formation in In0.52Al0.48As alloys grown on (0 0 1) InP substrates by metalorganic chemical vapor deposition was investigated using transmission electron microscopy (TEM). In the plan-view selective area diffraction pattern, the 12 superlattice reflections around the transmitted spot and the {2 0 0} spots were observed, which are associated with the chalcopyrite- and CuAu-type ordered structures. In the InAlAs consisting of III-III-V elements, these ordered phases with the rod-shaped domains elongated along the [2 2 0] show the coexistence of CuAu- and chalcopyrite-type ordered structures. An atomic model showing the formation process of the diffraction pattern of the chalcopyrite- and CuAu-type ordered structures is presented here based on the TEM results.

AB - Ordering formation in In0.52Al0.48As alloys grown on (0 0 1) InP substrates by metalorganic chemical vapor deposition was investigated using transmission electron microscopy (TEM). In the plan-view selective area diffraction pattern, the 12 superlattice reflections around the transmitted spot and the {2 0 0} spots were observed, which are associated with the chalcopyrite- and CuAu-type ordered structures. In the InAlAs consisting of III-III-V elements, these ordered phases with the rod-shaped domains elongated along the [2 2 0] show the coexistence of CuAu- and chalcopyrite-type ordered structures. An atomic model showing the formation process of the diffraction pattern of the chalcopyrite- and CuAu-type ordered structures is presented here based on the TEM results.

KW - InAlAs

KW - MOCVD

KW - Ordering

KW - TEM

UR - https://www.scopus.com/pages/publications/33645153500

U2 - 10.1016/j.physb.2005.12.151

DO - 10.1016/j.physb.2005.12.151

M3 - Conference article

AN - SCOPUS:33645153500

SN - 0921-4526

VL - 376-377

SP - 598

EP - 601

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

ER -

Coexistence of chalcopyrite and CuAu-type ordered structures in In _0.52Al_0.48As epilayers grown on InP substrates

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Keywords

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