Abstract
Diphenylsilane-derived high triplet energy host materials were developed by coupling diphenylsilane with CN-modified carbazoles. Two host materials with two CN-modified carbazoles or one CN-modified carbazole were synthesized, and their photophysical and device behavior were investigated. The host materials delivered a high triplet energy over 3.00 eV, a high glass transition temperature over 130 °C, ambipolar charge transport, and high external quantum efficiency over 20% as hosts of deep blue-emitting Ir emitters.
| Original language | English |
|---|---|
| Pages (from-to) | 342-350 |
| Number of pages | 9 |
| Journal | Organic Electronics |
| Volume | 62 |
| DOIs | |
| State | Published - Nov 2018 |
Keywords
- Blue device
- Efficiency
- Host
- Organic light-emitting diodes
- Phosphorescent device