TY - GEN
T1 - CMOS temperature sensor with ring oscillator for mobile DRAM self-refresh control
AU - Kim, Chan Kyung
AU - Kong, Bai Sun
AU - Lee, Chil Gee
AU - Jun, Young Hyun
PY - 2008
Y1 - 2008
N2 - This paper presents novel low-cost CMOS temperature sensor for controlling the self-refresh period of a mobile DRAM. In the proposed temperature sensor, the temperature dependency of poly resistance is used to generate a temperature-dependent bias current, and a ring oscillator driven by this bias current is employed to obtain the digital code pertaining to on-chip temperature. This method is highly area-efficient, simple and easy for IC implementation as compared to traditional temperature sensors based on bandgap reference. The proposed CMOS temperature sensor was fabricated with an 80nm 3-metal DRAM process, which occupies extremely small silicon area of only about 0.016 mm2 with under 1uW power consumption for providing 0.7° effective resolution at 1 sample/sec processing rate. This result indicates that as much as 73% area reduction was obtained with improved resolution as compared to the conventional temperature sensor in mobile DRAM.
AB - This paper presents novel low-cost CMOS temperature sensor for controlling the self-refresh period of a mobile DRAM. In the proposed temperature sensor, the temperature dependency of poly resistance is used to generate a temperature-dependent bias current, and a ring oscillator driven by this bias current is employed to obtain the digital code pertaining to on-chip temperature. This method is highly area-efficient, simple and easy for IC implementation as compared to traditional temperature sensors based on bandgap reference. The proposed CMOS temperature sensor was fabricated with an 80nm 3-metal DRAM process, which occupies extremely small silicon area of only about 0.016 mm2 with under 1uW power consumption for providing 0.7° effective resolution at 1 sample/sec processing rate. This result indicates that as much as 73% area reduction was obtained with improved resolution as compared to the conventional temperature sensor in mobile DRAM.
UR - https://www.scopus.com/pages/publications/51749095427
U2 - 10.1109/ISCAS.2008.4542112
DO - 10.1109/ISCAS.2008.4542112
M3 - Conference contribution
AN - SCOPUS:51749095427
SN - 9781424416844
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
SP - 3094
EP - 3097
BT - 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
T2 - 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
Y2 - 18 May 2008 through 21 May 2008
ER -