TY - JOUR
T1 - CMOS-compatible batch processing of monolayer MoS2 MOSFETs
AU - Xiong, Kuanchen
AU - Kim, Hyun
AU - Marstell, Roderick J.
AU - Göritz, Alexander
AU - Wipf, Christian
AU - Li, Lei
AU - Park, Ji Hoon
AU - Luo, Xi
AU - Wietstruck, Matthias
AU - Madjar, Asher
AU - Strandwitz, Nicholas C.
AU - Kaynak, Mehmet
AU - Lee, Young Hee
AU - Hwang, James C.M.
N1 - Publisher Copyright:
© 2018 IOP Publishing Ltd.
PY - 2018/3/21
Y1 - 2018/3/21
N2 - Thousands of high-performance 2D metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on wafer-scale chemical vapor deposited MoS2 with fully-CMOS-compatible processes such as photolithography and aluminum metallurgy. The yield was greater than 50% in terms of effective gate control with less-than-10 V threshold voltage, even for MOSFETs having deep-submicron gate length. The large number of fabricated MOSFETs allowed statistics to be gathered and the main yield limiter to be attributed to the weak adhesion between the transferred MoS2 and the substrate. With cut-off frequencies approaching the gigahertz range, the performances of the MOSFETs were comparable to that of state-of-the-art MoS2 MOSFETs, whether the MoS2 was grown by a thin-film process or exfoliated from a bulk crystal.
AB - Thousands of high-performance 2D metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on wafer-scale chemical vapor deposited MoS2 with fully-CMOS-compatible processes such as photolithography and aluminum metallurgy. The yield was greater than 50% in terms of effective gate control with less-than-10 V threshold voltage, even for MOSFETs having deep-submicron gate length. The large number of fabricated MOSFETs allowed statistics to be gathered and the main yield limiter to be attributed to the weak adhesion between the transferred MoS2 and the substrate. With cut-off frequencies approaching the gigahertz range, the performances of the MOSFETs were comparable to that of state-of-the-art MoS2 MOSFETs, whether the MoS2 was grown by a thin-film process or exfoliated from a bulk crystal.
KW - chemical vapor deposition
KW - CMOS process
KW - MOSFET
KW - semiconductor device manufacture
KW - semiconductor nanostructures
KW - thin film transistors
KW - wafer scale integration
UR - https://www.scopus.com/pages/publications/85044837485
U2 - 10.1088/1361-6463/aab4ba
DO - 10.1088/1361-6463/aab4ba
M3 - Article
AN - SCOPUS:85044837485
SN - 0022-3727
VL - 51
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
IS - 15
M1 - 15LT02
ER -