CMOS charge pump with separated charge sharing for improved boosting ratio and relaxed timing restriction

Seung Jae Choi; Young Hyun Jun; Bai Sun Kong

doi:10.1109/ASICON.2011.6157140

CMOS charge pump with separated charge sharing for improved boosting ratio and relaxed timing restriction

Seung Jae Choi
, Young Hyun Jun
, Bai Sun Kong

Department of Semiconductor Systems Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, a novel CMOS charge pump with charge sharing is proposed. The charge sharing operation is separated to the left and right sides of the proposed charge pump for providing high boosting ratio and relaxed control clock timing restriction. Comparison results in 0.18-um CMOS technology indicated that the proposed charge pump provides relatively high boosting ratio regardless of input clock timing mismatch and supply voltage variation.

Original language	English
Title of host publication	Proceedings - 2011 IEEE 9th International Conference on ASIC, ASICON 2011
Pages	133-136
Number of pages	4
DOIs	https://doi.org/10.1109/ASICON.2011.6157140
State	Published - 2011
Event	2011 IEEE 9th International Conference on ASIC, ASICON 2011 - Xiamen, China Duration: 25 Oct 2011 → 28 Oct 2011

Publication series

Name	Proceedings of International Conference on ASIC
ISSN (Print)	2162-7541
ISSN (Electronic)	2162-755X

Conference

Conference	2011 IEEE 9th International Conference on ASIC, ASICON 2011
Country/Territory	China
City	Xiamen
Period	25/10/11 → 28/10/11

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10.1109/ASICON.2011.6157140

Cite this

@inproceedings{3c78e991f5ff420cb49df370377d4f2b,

title = "CMOS charge pump with separated charge sharing for improved boosting ratio and relaxed timing restriction",

abstract = "In this paper, a novel CMOS charge pump with charge sharing is proposed. The charge sharing operation is separated to the left and right sides of the proposed charge pump for providing high boosting ratio and relaxed control clock timing restriction. Comparison results in 0.18-um CMOS technology indicated that the proposed charge pump provides relatively high boosting ratio regardless of input clock timing mismatch and supply voltage variation.",

author = "Choi, \{Seung Jae\} and Jun, \{Young Hyun\} and Kong, \{Bai Sun\}",

year = "2011",

doi = "10.1109/ASICON.2011.6157140",

language = "English",

isbn = "9781612841908",

series = "Proceedings of International Conference on ASIC",

pages = "133--136",

booktitle = "Proceedings - 2011 IEEE 9th International Conference on ASIC, ASICON 2011",

note = "2011 IEEE 9th International Conference on ASIC, ASICON 2011 ; Conference date: 25-10-2011 Through 28-10-2011",

}

Choi, SJ, Jun, YH & Kong, BS 2011, CMOS charge pump with separated charge sharing for improved boosting ratio and relaxed timing restriction. in Proceedings - 2011 IEEE 9th International Conference on ASIC, ASICON 2011., 6157140, Proceedings of International Conference on ASIC, pp. 133-136, 2011 IEEE 9th International Conference on ASIC, ASICON 2011, Xiamen, China, 25/10/11. https://doi.org/10.1109/ASICON.2011.6157140

CMOS charge pump with separated charge sharing for improved boosting ratio and relaxed timing restriction. / Choi, Seung Jae; Jun, Young Hyun; Kong, Bai Sun.
Proceedings - 2011 IEEE 9th International Conference on ASIC, ASICON 2011. 2011. p. 133-136 6157140 (Proceedings of International Conference on ASIC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - In this paper, a novel CMOS charge pump with charge sharing is proposed. The charge sharing operation is separated to the left and right sides of the proposed charge pump for providing high boosting ratio and relaxed control clock timing restriction. Comparison results in 0.18-um CMOS technology indicated that the proposed charge pump provides relatively high boosting ratio regardless of input clock timing mismatch and supply voltage variation.

AB - In this paper, a novel CMOS charge pump with charge sharing is proposed. The charge sharing operation is separated to the left and right sides of the proposed charge pump for providing high boosting ratio and relaxed control clock timing restriction. Comparison results in 0.18-um CMOS technology indicated that the proposed charge pump provides relatively high boosting ratio regardless of input clock timing mismatch and supply voltage variation.

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DO - 10.1109/ASICON.2011.6157140

M3 - Conference contribution

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SN - 9781612841908

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BT - Proceedings - 2011 IEEE 9th International Conference on ASIC, ASICON 2011

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Y2 - 25 October 2011 through 28 October 2011

ER -

CMOS charge pump with separated charge sharing for improved boosting ratio and relaxed timing restriction

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