Chlorine radical doping of a few layer graphene with low damage

Kyong Nam Kim; Viet Phuong Pham; Geun Young Yeom

doi:10.1149/2.0141506jss

Chlorine radical doping of a few layer graphene with low damage

Kyong Nam Kim
, Viet Phuong Pham
, Geun Young Yeom

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We present a graphene plasma doping method using chlorine radicals generated in an inductively coupled plasma (ICP) with a double mesh grid system. Raman spectroscopy and sheet resistance measurement showed that this doping method is non-destructive and controllable approach for the p-type graphene layer doping method. And, by using a chlorine trap-doping method, the sheet resistance could be decreased to 76% at an optimized condition for the tri-layer graphene.

Original language	English
Pages (from-to)	N5095-N5097
Journal	ECS Journal of Solid State Science and Technology
Volume	4
Issue number	6
DOIs	https://doi.org/10.1149/2.0141506jss
State	Published - 2015

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title = "Chlorine radical doping of a few layer graphene with low damage",

abstract = "We present a graphene plasma doping method using chlorine radicals generated in an inductively coupled plasma (ICP) with a double mesh grid system. Raman spectroscopy and sheet resistance measurement showed that this doping method is non-destructive and controllable approach for the p-type graphene layer doping method. And, by using a chlorine trap-doping method, the sheet resistance could be decreased to 76\% at an optimized condition for the tri-layer graphene.",

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AU - Kim, Kyong Nam

AU - Pham, Viet Phuong

AU - Yeom, Geun Young

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N2 - We present a graphene plasma doping method using chlorine radicals generated in an inductively coupled plasma (ICP) with a double mesh grid system. Raman spectroscopy and sheet resistance measurement showed that this doping method is non-destructive and controllable approach for the p-type graphene layer doping method. And, by using a chlorine trap-doping method, the sheet resistance could be decreased to 76% at an optimized condition for the tri-layer graphene.

AB - We present a graphene plasma doping method using chlorine radicals generated in an inductively coupled plasma (ICP) with a double mesh grid system. Raman spectroscopy and sheet resistance measurement showed that this doping method is non-destructive and controllable approach for the p-type graphene layer doping method. And, by using a chlorine trap-doping method, the sheet resistance could be decreased to 76% at an optimized condition for the tri-layer graphene.

UR - https://www.scopus.com/pages/publications/84946164634

U2 - 10.1149/2.0141506jss

DO - 10.1149/2.0141506jss

M3 - Article

AN - SCOPUS:84946164634

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SP - N5095-N5097

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 6

ER -

Chlorine radical doping of a few layer graphene with low damage

Abstract

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